Buried Interface Chelating Molecular Bridge Strategy Enables Highly Efficient and Stable Inverted Perovskite Solar Cells

L Linwei Li T Tangyue Xue F Fan Yuan C Chenyun Wang (State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China) H Huilong Wang (Henan Institute of Advanced Technology College of Chemistry Zhengzhou University Zhengzhou China) J Jingyang Niu (Henan Key Laboratory of Polyoxometalate Chemistry College of Chemistry and Chemical Engineering Henan University Kaifeng Henan 475004 P.R. China) Q Qiang Guo X Xiaotian Hu X Xiangnan Sun E Erjun Zhou (College of Biological and Chemical Engineering)

Abstract

ABSTRACT [4‐(3,6‐dimethyl‐9H‐carbazol‐9yl)butyl]phosphonic acid (Me‐4PACz) self‐assembled monolayers (SAMs) as hole‐transport layers (HTLs) have enabled remarkable performance in inverted perovskite solar cells (PSCs). However, the uneven coverage and terminal carbazole groups of Me‐4PACz SAMs cannot effectively passivate defects, which constrains further improvements in device performance. Herein, we use post‐assembled chelating molecular bridge strategy to introduce 2,5‐thiophenedicarboxylic acid (TDCA) as interface layer between Me‐4PACz HTL and perovskite layer, which not only ensures the priority deposition of the primary Me‐4PACz SAM, but also fills voids within the Me‐4PACz HTL to form dense and uniform bilayer HTL. In addition, the C═O groups and S atom in TDCA can chelate with uncoordinated Pb 2+ in perovskite, effectively passivating buried interface defects. Consequently, the PSCs based on TDCA interface layer achieved a champion PCE of 26.15%. It is noteworthy that this strategy has excellent process compatibility. The PCE of narrow‐bandgap (1.55 eV) and wide‐bandgap (1.77 eV) PSCs are 26.20% and 21.65%, respectively. Furthermore, the corresponding PSCs maintain more than 94.2% and 90.7% of initial efficiency after 2500 h in a glove box and 1000 h under one‐sun illumination, respectively. This work provides a promising buried interface molecular bridge strategy for high‐performance PSCs.

Article Details

Volume / Issue Vol. 38, Issue 10
Published February 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

L

Linwei Li

T

Tangyue Xue

F

Fan Yuan

C

Chenyun Wang

State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Shaanxi Key Laboratory of Flexible Electronics MIIT Key Laboratory of Flexible Electronics (KLOFE) Northwestern Polytechnical University Xi'an 710072 China

H

Huilong Wang

Henan Institute of Advanced Technology College of Chemistry Zhengzhou University Zhengzhou China

J

Jingyang Niu

Henan Key Laboratory of Polyoxometalate Chemistry College of Chemistry and Chemical Engineering Henan University Kaifeng Henan 475004 P.R. China

Q

Qiang Guo

X

Xiaotian Hu

X

Xiangnan Sun

E

Erjun Zhou

College of Biological and Chemical Engineering