Bulk Passivation of Molybdenum Trioxide Enables Inverted Organic Photovoltaics with Significantly Enhanced Stability under Extreme Conditions

Q Qianqian Qi J Jiaming Huang (Institute of Chemical Research of Catalonia (ICIQ), The Barcelona Institute of Science and Technology (BIST), Avgda. Països Catalans 16, Tarragona 43007, Spain) C Cenqi Yan (College of Polymer Science and Engineering State Key Laboratory of Advanced Polymer Materials Sichuan University Chengdu China) J Jiayu Wang (Jiangsu Engineering Laboratory of Novel Functional Polymeric Materials, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Suzhou Key Laboratory of Soft Material and New Energy, College of Chemistry, Chemical Engineering and Materials Science, Soochow University) J Jiehao Fu (Department of Electrical and Electronic Engineering The Hong Kong Polytechnic University Hong Kong P. R. China) K Kaifeng Jing G Guang Yang Y Yakun He Y Yufei Gong J Jie Lv X Xiaokang Sun (Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen 518055 P.R. China) X Xian He (School of Chemistry and Chemical Engineering) Q Qiang Yang (Synthetic Molecule Design and Development, Lilly Research Laboratories) X Xiancheng Ren K Ke Zeng H Hanlin Hu H Hua Tang (Department of Genetics, Stanford University, Stanford, CA, USA.) F Frederic Laquai L Lei Meng Y Yongfang Li G Gang Li (State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China) P Pei Cheng

Abstract

ABSTRACT While organic photovoltaics (OPVs) have achieved remarkable efficiencies, their practical deployment remains hindered by insufficient stability. Herein, we find that degradation is strongly associated with diffusion‐driven intermixing and redox chemistry at the buried molybdenum trioxide (MoO 3 )/photoactive materials contact region. To address this issue, we incorporate 1H‐isoindole‐1,3(2H)‐dione, 2,2’‐(oxydi‐4,1‐phenylene) bis[3a,4,7,7a‐tetrahydro‐(9CI)] (IPE) into the bulk heterojunction as a bulk passivator that interacts with diffusing MoO 3 species by passivating oxygen vacancies in MoO 3 , thereby suppressing redox reactions between MoO 3 and photoactive materials. The IPE‐containing devices achieve a champion efficiency of 19.06% alongside exceptional thermal robustness, retaining 87.5% of their initial efficiency after thermal aging at 170°C for 5 h (vs. 48.8% for control devices). Critically, under harsh environmental stressors, these devices maintain >80% of their initial efficiency after 500 thermal cycles (−40°C to 85°C, ∼60% relative humidity, ISOS‐T‐3) and over 1150‐h continuous maximum power point tracking under 1 Sun illumination (65°C, ∼50% relative humidity, ISOS‐L‐3). This represents one of the highest stability levels reported for OPVs under the stringent ISOS‐T‐3 and ISOS‐L‐3 protocols. This work provides a generalizable bulk modification strategy to mitigate diffusion‐ and redox‐driven degradation at buried contacts, paving the way for the practical deployment of stable, high‐efficiency OPVs.

Article Details

Volume / Issue Vol. 38, Issue 15
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (22)

Q

Qianqian Qi

J

Jiaming Huang

Institute of Chemical Research of Catalonia (ICIQ), The Barcelona Institute of Science and Technology (BIST), Avgda. Països Catalans 16, Tarragona 43007, Spain

C

Cenqi Yan

College of Polymer Science and Engineering State Key Laboratory of Advanced Polymer Materials Sichuan University Chengdu China

J

Jiayu Wang

Jiangsu Engineering Laboratory of Novel Functional Polymeric Materials, Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Suzhou Key Laboratory of Soft Material and New Energy, College of Chemistry, Chemical Engineering and Materials Science, Soochow University

J

Jiehao Fu

Department of Electrical and Electronic Engineering The Hong Kong Polytechnic University Hong Kong P. R. China

K

Kaifeng Jing

G

Guang Yang

Y

Yakun He

Y

Yufei Gong

J

Jie Lv

X

Xiaokang Sun

Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen 518055 P.R. China

X

Xian He

School of Chemistry and Chemical Engineering

Q

Qiang Yang

Synthetic Molecule Design and Development, Lilly Research Laboratories

X

Xiancheng Ren

K

Ke Zeng

H

Hanlin Hu

H

Hua Tang

Department of Genetics, Stanford University, Stanford, CA, USA.

F

Frederic Laquai

L

Lei Meng

Y

Yongfang Li

G

Gang Li

State Key Laboratory of Molecular Reaction Dynamics and Dalian Coherent Light Source Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China

P

Pei Cheng