Broadband Circularly Polarized Light Detection via Spin‐Selective Charge Transport in Quantum Dot Photodiodes

M Minseo Kim (Department of Semiconductor Engineering Gachon University Seongnam Republic of Korea) S Shi Li (Department of Oncology Shenyang Chest Hospital Shenyang China) K Kyunghoon Lee E Eonhyoung Ahn (Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu Republic of Korea) S Soyeon Lee K Kiwook Kim H Hang Kim (Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu Republic of Korea) W Wookyung Yu (Department of Brain Sciences, Daegu Gyeongbuk Institute of Science and Technology) C Changsoon Choi J Jung Ah Lim (Yonsei-Korea Institute of Science and Technology Convergence Research Institute) J Jeeseong Hwang (Applied Physics Division National Institute of Standards and Technology Boulder Colorado USA) D Dae‐Hyeong Kim (Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea) J Jiwoong Yang

Abstract

ABSTRACT Circularly polarized light (CPL) detection provides polarization‐resolved information, enabling advanced applications in quantum technologies, bioimaging, secure communications, and multi‐level optical data processing. However, conventional CPL photodetectors typically rely on intrinsically chiral absorbers, restricting operation to the UV–vis range and hindering extension into the near‐infrared (NIR) and shortwave infrared (SWIR), which are critical for deep tissue imaging and low‐visibility sensing. Here, we demonstrate broadband CPL detection with quantum dot (QD) photodiodes that exploit the chiral‐induced spin selectivity effect in chiral‐ZnO charge transport layers. Chiral ligand‐functionalized ZnO electron transport layers selectively transmit spin‐polarized charge carriers from QDs, enabling CPL‐specific photocurrent generation even in spectral regions without intrinsic chiral absorption. Heavy‐metal‐free Cu–In–Se QD‐photodiodes exhibit outstanding specific detectivity ( D * ) of 1.28 × 10 12 Jones without external bias and broadband CPL detection ( g Iph : ∼0.17 at 260 nm and ∼0.13 at 780 nm), while PbS QD‐devices extend CPL detection across 250–1700 nm (UV–Vis–NIR–SWIR) with superior performance ( D * : 1.45 × 10 12 Jones). The chiral‐transport‐driven strategy offers fundamental insights into CPL photodetection and establishes a scalable and optically passive platform for broadband polarization‐resolved optoelectronics.

Article Details

Volume / Issue Vol. 38, Issue 14
Published March 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

M

Minseo Kim

Department of Semiconductor Engineering Gachon University Seongnam Republic of Korea

S

Shi Li

Department of Oncology Shenyang Chest Hospital Shenyang China

K

Kyunghoon Lee

E

Eonhyoung Ahn

Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu Republic of Korea

S

Soyeon Lee

K

Kiwook Kim

H

Hang Kim

Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology (DGIST) Daegu Republic of Korea

W

Wookyung Yu

Department of Brain Sciences, Daegu Gyeongbuk Institute of Science and Technology

C

Changsoon Choi

J

Jung Ah Lim

Yonsei-Korea Institute of Science and Technology Convergence Research Institute

J

Jeeseong Hwang

Applied Physics Division National Institute of Standards and Technology Boulder Colorado USA

D

Dae‐Hyeong Kim

Center for Nanoparticle Research Institute for Basic Science (IBS) Seoul 08826 Republic of Korea

J

Jiwoong Yang