Boron Hybridization Engineering for Regulating Room Temperature Phosphorescence

S Senjie Hu (Institute of Flexible Electronics (IFE Future Technologies) Xiang'an Campus Xiamen University Xiang'an South Road Xiamen 361102 China) W Weiwei Zhang (State Key Laboratory of Green Chemical Engineering and Industrial Catalysis, Key Laboratory for Advanced Materials, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering) K Kai Wang H Huili Ma (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)) X Xiao Wang Z Zhongfu An (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)) W Wei Huang

Abstract

Abstract Organic room temperature phosphorescence (RTP) materials have attracted widespread attention for their potential in both fundamental research and advanced technologies. However, their development is hindered by weak spin‐orbit coupling and nonradiative decay. Here, we present a boron hybridization engineering strategy in which arylboronic esters are incorporated into poly(4‐vinylpyridine). By regulating the hybridization state of boron atoms from sp 2 to sp 3 , the phosphorescence properties can be effectively tuned. Simultaneously, the formation of B‐N bonds suppresses nonradiative decay, leading to long‐lived RTP with lifetimes up to 2.23 s. Both experimental evidence and theoretical calculations confirm the occurrence of boron hybridization switching and its decisive role in modulating phosphorescence. Moreover, the B‐N bonds exhibit acid‐base responsiveness, endowing the system with dynamic phosphorescence behavior. Beyond demonstrating triplet exciton control, this work establishes a molecular design principle that may guide the creation of multifunctional organic phosphorescent materials.

Article Details

Volume / Issue Vol. 65, Issue 4
Published January 22, 2026
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (7)

S

Senjie Hu

Institute of Flexible Electronics (IFE Future Technologies) Xiang'an Campus Xiamen University Xiang'an South Road Xiamen 361102 China

W

Weiwei Zhang

State Key Laboratory of Green Chemical Engineering and Industrial Catalysis, Key Laboratory for Advanced Materials, Institute of Fine Chemicals, School of Chemistry and Molecular Engineering

K

Kai Wang

H

Huili Ma

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)

X

Xiao Wang

Z

Zhongfu An

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM), School of Flexible Electronics (Future Technologies)

W

Wei Huang