Boosting the Efficiency of 1.84 eV Wide‐Bandgap Perovskites Photovoltaics Beyond 19% via Yb <sup>3+</sup> Engineering

T Taomiao Wang (Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen China) F Fei Wang Y Yonggui Sun (Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen Guangdong P. R. China) Y Yanrong Zhu (Shaanxi Electric Power Research Institute, State Grid Shaanxi Electric Power Co. 2 , Xi'an 710054,) T Tao Zhang Q Qiannan Li X Xianfang Zhou (State Key Laboratory of Advanced Glass Materials Wuhan 430070 China) D Dawei Duan (Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen China) Q Quanyao Zhu (State Key Laboratory of Advanced Glass Materials Wuhan 430070 China) Y Yumeng Shi (International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics) Y Yonghua Chen M Mingjian Yuan H Haizhe Zhong (International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University , Shenzhen 518060,) H Hanlin Hu

Abstract

Abstract Phase segregation remains one of the most critical challenges limiting the performance and long‐term operational stability of wide‐bandgap perovskite solar cells (PSCs). This issue is especially pronounced in 1.84 eV wide‐bandgap (WBG) perovskites, where severe halide phase segregation leads to compositional heterogeneity and accelerated device degradation. In this work, a comprehensive investigation of halide ion distribution across the surface and bottom interfaces of 1.84 eV perovskite films is conducted, revealing significant Br − /I − halide phase segregation that severely impairs device efficiency and stability. To address this, Ytterbium (III) trifluoromethanesulfonate (Yb(TFSI) 3 ) is introduced as a multifunctional additive in the perovskite precursor. The strong coordination between Yb 3+ ions and halide anions not only modulates the crystallization kinetics but also homogenizes the spatial distribution of Br‐rich and I‐rich domains, resulting in high‐quality perovskite films with reduced compositional heterogeneity. Furthermore, Yb 3+ significantly suppresses halide migration and ion exchange processes, thereby enhancing phase stability. Depth‐resolved characterizations, including grazing‐incidence wide‐angle X‐ray scattering, confirm improved crystallinity, structural uniformity, and suppressed phase segregation across the film depth. As a result, the champion device achieves an outstanding power conversion efficiency (PCE) of 19.06% and retains 85% of its initial efficiency after 1500 h in a nitrogen atmosphere (10% RH, 25 °C).

Article Details

Volume / Issue Vol. 38, Issue 1
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (14)

T

Taomiao Wang

Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen China

F

Fei Wang

Y

Yonggui Sun

Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen Guangdong P. R. China

Y

Yanrong Zhu

Shaanxi Electric Power Research Institute, State Grid Shaanxi Electric Power Co. 2 , Xi'an 710054,

T

Tao Zhang

Q

Qiannan Li

X

Xianfang Zhou

State Key Laboratory of Advanced Glass Materials Wuhan 430070 China

D

Dawei Duan

Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen China

Q

Quanyao Zhu

State Key Laboratory of Advanced Glass Materials Wuhan 430070 China

Y

Yumeng Shi

International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics

Y

Yonghua Chen

M

Mingjian Yuan

H

Haizhe Zhong

International Collaborative Laboratory of 2D Materials for Optoelectronic Science & Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University , Shenzhen 518060,

H

Hanlin Hu