Bond weakening and strong anharmonicity driven ultralow thermal conductivity in monolayer CdIn2Se4

W Wu Pan (School of Physics and Electronic Science, Guizhou Normal University 1 , Guiyang 550025,) Y Yuanhu Lei (School of Physics and Electronic Science, Guizhou Normal University 1 , Guiyang 550025,) S Shengnan Luo (School of Physics and Electronic Science, Guizhou Normal University 1 , Guiyang 550025,) Y Yanting Wang B Bing Lv (Department of Physics, The University of Texas at Dallas) X Xiaoshu Song (School of Physics and Electronic Science, Guizhou Normal University 1 , Guiyang 550025,)

Abstract

Two-dimensional (2D) materials with ultralow lattice thermal conductivity (kl) are crucial for high-efficiency thermoelectrics. Herein, we investigate the thermal transport properties of monolayer CdIn2Se4 using first-principles calculations combined with the phonon Boltzmann transport equation. An exceptionally low kl of 0.28 W m−1 K−1 is predicted at 300 K. This ultralow kl originates from the synergistic effect of strong lattice anharmonicity and weakened chemical bonds. The strong anharmonicity induces intense phonon scattering, and an extremely strong intraband and interband scattering in the out-of-plane acoustic branch is identified beyond expectation, leading to extremely short phonon relaxation times. Chemical bonding analysis reveals that the filling of antibonding states below the Fermi level weakens the Se–Cd bonds, which significantly reduces the phonon group velocities. Further scattering channel analysis confirms that the strong acoustic–acoustic and acoustic–optical phonon scatterings are the key factors suppressing kl. Our findings not only pinpoint the dual origins of ultralow kl in a promising 2D thermoelectric material but also provide a mechanistic framework for designing materials with engineered thermal transport properties.

Article Details

Volume / Issue Vol. 139, Issue 14
Published April 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (6)

W

Wu Pan

School of Physics and Electronic Science, Guizhou Normal University 1 , Guiyang 550025,

Y

Yuanhu Lei

School of Physics and Electronic Science, Guizhou Normal University 1 , Guiyang 550025,

S

Shengnan Luo

School of Physics and Electronic Science, Guizhou Normal University 1 , Guiyang 550025,

Y

Yanting Wang

B

Bing Lv

Department of Physics, The University of Texas at Dallas

X

Xiaoshu Song

School of Physics and Electronic Science, Guizhou Normal University 1 , Guiyang 550025,