Bisphosphonate‐Embedded a π‐Conjugated Passivator Enable Efficient and Stable <i>n‐i‐p</i> Perovskite Solar Cells with Low‐Polarity Solvent Processing

X Xiaochun Liao (Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China) Y Yueli Liu (State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Department of Physics Peking University Beijing 100871 P. R. China) X Xinyue Cao (Materdicine Lab, School of Life Sciences, Shanghai University, 200444 Shanghai, P. R. China) J Jie Wu T Tongqiang Liu (Zhejiang Engineering Research Centre for Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China) P Pengfei Ding J Jialei Liu (Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China) Q Qiaoling Zuo (Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China) H He Sun B Bo Qu L Lixin Xiao D Daobin Yang (Zhejiang Engineering Research Centre for Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China) Z Ziyi Ge

Abstract

Abstract Interface passivators play a critical role in improving the efficiency of perovskite solar cells (PSCs). However, the conventional passivators often require processing in high‐polarity solvents that can cause additional surface defects on the perovskite film, thereby reducing the efficiency and stability of n‐i‐p PSCs. Herein, a bisphosphate molecule (named DCTP) is designed and synthesized to simultaneously address solvent compatibility, defect passivation, and hole extraction. DCTP has good solubility in low‐polarity solvents such as toluene, chlorobenzene, and chloroform without damaging the perovskite surface. The chlorobenzene‐processed DCTP interlayer can sufficiently passivate the defects on the perovskite surface and improve the energy level arrangement at the perovskite/hole transporting layer interface. Meanwhile, the DCTP layer effectively inhibits interlayer diffusion of formamidine (FA + ), iodide (I − ), and lithium (Li + ) and ions under thermal stress. As a result, the DCTP‐controlled device produces a champion power conversion efficiency (PCE) of 26.07% with excellent reproducibility, compared to 24.28% for the reference device. More importantly, the operational stability of the device is significantly improved. The DCTP‐treated device retains 90.1% of its initial PCE after 900 h of maximum power point tracking (MPPT) at 65 °C under the ISOS‐L‐2I protocol.

Article Details

Volume / Issue Vol. 38, Issue 3
Published January 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

X

Xiaochun Liao

Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China

Y

Yueli Liu

State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, Department of Physics Peking University Beijing 100871 P. R. China

X

Xinyue Cao

Materdicine Lab, School of Life Sciences, Shanghai University, 200444 Shanghai, P. R. China

J

Jie Wu

T

Tongqiang Liu

Zhejiang Engineering Research Centre for Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

P

Pengfei Ding

J

Jialei Liu

Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China

Q

Qiaoling Zuo

Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 P. R. China

H

He Sun

B

Bo Qu

L

Lixin Xiao

D

Daobin Yang

Zhejiang Engineering Research Centre for Energy Optoelectronic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo 315201 China

Z

Ziyi Ge