Bipyridine–Thiosumanene Isomeric Lewis Bases for Synergistic Defect Passivation and Hole Extraction Enables Over 26% Efficient Perovskite Solar Cells

Z Zhongquan Wan Y Yuanxi Wang (National Key Laboratory of Electronic Films and Integrated Devices, School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu 611731 P.R. China) Y Yao Ma (Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433, China) M Muhammad Azam B Boxue Zhang X Xiangfeng Shao (State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Special Function Materials and Structure Design, College of Chemistry and Chemical Engineering) R Runmin Wei H Haomiao Yin H Huaibiao Zeng J Junsheng Luo C Chunyang Jia

Abstract

Abstract Interface defects between the perovskite layer and the hole transport layer (HTL) seriously limit the power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). Herein, we designed two isomers, 4BT and 5BT, based on 2,2′‐bipyridine‐thiosumanene‐functionalized polycyclic aromatic hydrocarbons as novel Lewis bases with dual capabilities for deep‐level defects (Pb 2+ , V I ) passivation and promoting hole extraction. By shifting the pyridine bridging unit from the tetra to the penta positions, these molecules undergo a configurational transformation from an orthogonal (4BT) to a planar structure (5BT). The configuration‐functionality relationship was comprehensively investigated through theoretical and experimental analyses. The planar configuration of 5BT enables more Lewis base sites to interact with perovskite, exhibiting more pronounced deep‐level defect passivation effect, while improving hole extraction capability. Consequently, the 5BT‐modified n‐i‐p PSCs achieved a champion PCE of 26.15% (certified at 26.12%) and superior operational stability by retaining 94.0% of the initial PCE according to ISOS‐L‐2 protocol. This work offers a unique molecular designing mechanism to address the interfacial‐related issues for high‐performance PSCs.

Article Details

Volume / Issue Vol. 64, Issue 37
Published September 08, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (11)

Z

Zhongquan Wan

Y

Yuanxi Wang

National Key Laboratory of Electronic Films and Integrated Devices, School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu 611731 P.R. China

Y

Yao Ma

Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433, China

M

Muhammad Azam

B

Boxue Zhang

X

Xiangfeng Shao

State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Special Function Materials and Structure Design, College of Chemistry and Chemical Engineering

R

Runmin Wei

H

Haomiao Yin

H

Huaibiao Zeng

J

Junsheng Luo

C

Chunyang Jia