Beyond Self‐Assembled Molecules: Hydrogen‐Bonding‐Regulated Crystallization of Wide‐Bandgap Perovskite for High‐Performance Perovskite‐Silicon Tandem Photovoltaics

F Fei Wang T Taomiao Wang (Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen China) Y Yuhui Ji (Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China) J Junjun Li J Jianliang Wang Z Zhenzhu Zhao (Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China) P Pengxu Chen S Shuangbiao Xia (Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China) Y Yutao Wang T Tao Zhang Q Qi Liu S Shiying Sun (Laboratory of Environmental Sciences and Technology Xinjiang Technical Institute of Physics & Chemistry Key Laboratory of Functional Materials and Devices for Special Environments Chinese Academy of Sciences Urumqi China) Y Yunren Luo (Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China) Q Qiang Shi N Na Wang C Chen Yang (Hangzhou Institute of Advanced Studies) K Kexin Yao J Jian Yu (Department of Chemistry) Z Zijia Li F Fanying Meng L Liping Zhang J Jiakai Liu H Hanlin Hu Z Zhengxin Liu W Wenzhu Liu

Abstract

ABSTRACT Wide‐bandgap (WBG) perovskites crystallization is essential for high‐efficiency perovskite–silicon tandem solar cells (TSCs), yet their fabrication on self‐assembled molecules (SAMs) is often challenged by solvent‐induced damage and uncontrolled packing. Here, we report an interfacial engineering strategy that goes beyond conventional SAM modification by introducing a thiophen‐3‐ylmethanamine hydrochloride (3‐TMA) molecular layer between the SAM and perovskite photo‐active layer. The aromatic thiophene units establish strong π ‑ π stacking interactions with the underlying SAM, forming a solvent‐resistant interlayer that stabilizes the anchored SAM structure during solution processing. Meanwhile, hydrogen‐bonding interactions between 3‐TMA and the perovskite precursors effectively decelerate crystallization, promoting uniform nucleation and high‐quality WBG perovskite films. The resulting interface exhibits improved energy‐level alignment and reduced interfacial stress, facilitating efficient charge transport and enhanced device stability. Consequently, single‐junction WBG perovskite devices with bandgaps of 1.67 and 1.84 eV achieve champion power conversion efficiencies (PCEs) of 23.17% and 19.61%, respectively. When integrated into monolithic perovskite‒silicon TSCs, the strategy enables PCEs of 33.21% (certified 32.13%) for rigid tandems and 31.03% (certified 30.34%) for flexible tandems. Encapsulated devices retain 92.3% of their initial performance after 1000 h of continuous 1 sun illumination at room temperature.

Article Details

Volume / Issue Vol. 1, Issue 1
Published July 21, 2026
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (25)

F

Fei Wang

T

Taomiao Wang

Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen China

Y

Yuhui Ji

Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China

J

Junjun Li

J

Jianliang Wang

Z

Zhenzhu Zhao

Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China

P

Pengxu Chen

S

Shuangbiao Xia

Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China

Y

Yutao Wang

T

Tao Zhang

Q

Qi Liu

S

Shiying Sun

Laboratory of Environmental Sciences and Technology Xinjiang Technical Institute of Physics & Chemistry Key Laboratory of Functional Materials and Devices for Special Environments Chinese Academy of Sciences Urumqi China

Y

Yunren Luo

Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China

Q

Qiang Shi

N

Na Wang

C

Chen Yang

Hangzhou Institute of Advanced Studies

K

Kexin Yao

J

Jian Yu

Department of Chemistry

Z

Zijia Li

F

Fanying Meng

L

Liping Zhang

J

Jiakai Liu

H

Hanlin Hu

Z

Zhengxin Liu

W

Wenzhu Liu