Beyond Self‐Assembled Molecules: Hydrogen‐Bonding‐Regulated Crystallization of Wide‐Bandgap Perovskite for High‐Performance Perovskite‐Silicon Tandem Photovoltaics
Abstract
ABSTRACT Wide‐bandgap (WBG) perovskites crystallization is essential for high‐efficiency perovskite–silicon tandem solar cells (TSCs), yet their fabrication on self‐assembled molecules (SAMs) is often challenged by solvent‐induced damage and uncontrolled packing. Here, we report an interfacial engineering strategy that goes beyond conventional SAM modification by introducing a thiophen‐3‐ylmethanamine hydrochloride (3‐TMA) molecular layer between the SAM and perovskite photo‐active layer. The aromatic thiophene units establish strong π ‑ π stacking interactions with the underlying SAM, forming a solvent‐resistant interlayer that stabilizes the anchored SAM structure during solution processing. Meanwhile, hydrogen‐bonding interactions between 3‐TMA and the perovskite precursors effectively decelerate crystallization, promoting uniform nucleation and high‐quality WBG perovskite films. The resulting interface exhibits improved energy‐level alignment and reduced interfacial stress, facilitating efficient charge transport and enhanced device stability. Consequently, single‐junction WBG perovskite devices with bandgaps of 1.67 and 1.84 eV achieve champion power conversion efficiencies (PCEs) of 23.17% and 19.61%, respectively. When integrated into monolithic perovskite‒silicon TSCs, the strategy enables PCEs of 33.21% (certified 32.13%) for rigid tandems and 31.03% (certified 30.34%) for flexible tandems. Encapsulated devices retain 92.3% of their initial performance after 1000 h of continuous 1 sun illumination at room temperature.
Article Details
Authors (25)
Fei Wang
Taomiao Wang
Hoffmann Institute of Advanced Materials Shenzhen Polytechnic University Shenzhen China
Yuhui Ji
Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China
Junjun Li
Jianliang Wang
Zhenzhu Zhao
Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China
Pengxu Chen
Shuangbiao Xia
Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China
Yutao Wang
Tao Zhang
Qi Liu
Shiying Sun
Laboratory of Environmental Sciences and Technology Xinjiang Technical Institute of Physics & Chemistry Key Laboratory of Functional Materials and Devices for Special Environments Chinese Academy of Sciences Urumqi China
Yunren Luo
Research Center for New Energy Technology (RCNET) National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences (CAS) Shanghai China
Qiang Shi
Na Wang
Chen Yang
Hangzhou Institute of Advanced Studies
Kexin Yao
Jian Yu
Department of Chemistry
Zijia Li
Fanying Meng
Liping Zhang
Jiakai Liu
Hanlin Hu
Zhengxin Liu
Wenzhu Liu