Barcode encryption based on reflected spatial shifts on the surface of twisted black phosphorus/α-MoO3 heterostructure
Abstract
In this work, we propose a heterostructure composed of multilayer twisted black phosphorous (BP) and α-phase molybdenum trioxide (α-MoO3) since the twist angles among BP layers may result in exotic phenomena. We theoretically investigate the impact of the primary physical parameters on the Goos–Hänchen (GH) and Imbert–Fedorov (IF) shifts in or near the reststrahlen bands, including the twisted angle, carrier density, and layer numbers of the twisted BP film. The optimal twisted BP/α-MoO3 heterostructure is selected for the different crystalline structure of α-MoO3, where the maximum of GH-shifts can achieve 11704.5λ0 (λ0 is the vacuum wavelength), resulting in a direct measurement. On the other hand, the IF-shift caused by the anisotropy of the twisted BP layer is increased at 1892.1λ0. Based on the tunable GH- and IF-shifts, information processing through two or four separate channels for barcode encryption is constructed and examined. The outcomes can serve as a guide for using GH- and IF-shift in optical encoder design.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (7)
Xiyue Zhang
Di Yu
Yubo Li
State Key Laboratory of Chinese Medicine Modernization
Haoyuan Song
Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University , Harbin 150025,
Yutian Zhao
Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University , Harbin 150025,
Shufang Fu
Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University , Harbin 150025,
Xuan-Zhang Wang
Key Laboratory for Photonic and Electronic Bandgap Materials, Chinese Ministry of Education, and School of Physics and Electronic Engineering, Harbin Normal University , Harbin 150025,