Bandgaps in cubic InGaN for the entire composition range including many-body effects
Abstract
We present our investigation of cubic zinc blende InGaN thin films grown by plasma-assisted molecular beam epitaxy on c-GaN/c-AlN/3C-SiC/Si substrates oriented in the (001) orientation. Through spectroscopic ellipsometry analyses spanning the infrared and visible-ultraviolet spectral ranges, we extract the dielectric function, which contains contributions from phonons, plasmons, and interband transitions. A linear shift of TO-phonon frequency, ranging from 467cm−1 for InN to 555cm−1 for GaN, was observed. Moreover, we consider a non-parabolic conduction band, many-body effects such as bandgap renormalization, and Burstein–Moss shift, as well as strain-induced alterations in the absorption edge. From this, the fundamental bandgap energies at room temperature and a bowing parameter of bG=1.61eV can be determined.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (8)
Jonas Rose
Institut für Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2 1 , Magdeburg 39106,
Elias Baron
Institut für Physik, Otto-von-Guericke-Universität Magdeburg 1 , Universitätsplatz 2, 39106 Magdeburg,
Rüdiger Goldhahn
Otto-von-Guericke-Universität Magdeburg, Institut für Physik 1 , Universitätsplatz 2, 39106 Magdeburg,
Mario F. Zscherp
Institute of Experimental Physics I and Center for Materials Research, Justus-Liebig-University Giessen 1 , Giessen,
Silas A. Jentsch
Institute of Experimental Physics I and Center for Materials Research, Justus-Liebig-University Giessen 1 , Giessen,
Sangam Chatterjee
Jörg Schörmann
Institute of Experimental Physics I and Center for Materials Research, Justus-Liebig-University Giessen 1 , Giessen,
Martin Feneberg
Otto-von-Guericke-Universität Magdeburg, Institut für Physik 1 , Universitätsplatz 2, 39106 Magdeburg,