Band structure engineering and interfacial charge modulation in ReS2/1T′-MoS2 and ReS2/1T′-WS2 heterostructures for tunable hydrogen adsorption

A Ashita Jose (Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University 1 , Puducherry 605014,) N N. Meenakshisundaram (Department of Physics, Vivekananda College 2 , Tiruvedakam West, Madurai 625234,) K K. V. P. Latha (Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University 1 , Puducherry 605014,)

Abstract

In this work, we employ first-principles calculations including the spin–orbit coupling effects (SOC) to investigate the electronic structure and hydrogen evolution reaction (HER) activity of two novel heterostructures, ReS2/1T′-WS2 and ReS2/1T′-MoS2. Our results demonstrate the potential of ReS2 to form stable heterostructures with monolayers of metastable 1T′ phases of WS2 and MoS2, respectively. The strong in-plane anisotropy of the 1T′ layers, combined with interlayer hybridization and charge redistribution, activates additional interfacial adsorption sites. As a result, both the heterostructures exhibit superior hydrogen evolution reaction (HER) activity compared to their monolayer 1T′ counterparts. By calculating the change in Gibbs free energy of hydrogen adsorption (ΔGH) at top, bottom, and interfacial sites, we identify the most favorable adsorption sites contributing to HER activity. Our results show that the minimum ΔGH is 0.15 eV for ReS2/1T′-WS2, and ReS2/1T′-MoS2 exhibits even better HER activity with nearly optimal ΔGH of 0.02 eV. These findings highlight the possibility of band structure engineering in these heterostructures, with ReS2 as a viable approach to stabilize the metastable phases and further achieve enhanced HER activity. In addition, this strategy offers a promising pathway toward efficient and earth abundant alternatives to noble-metal electrocatalysts.

Article Details

Volume / Issue Vol. 138, Issue 18
Published November 14, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (3)

A

Ashita Jose

Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University 1 , Puducherry 605014,

N

N. Meenakshisundaram

Department of Physics, Vivekananda College 2 , Tiruvedakam West, Madurai 625234,

K

K. V. P. Latha

Department of Physics, School of Physical, Chemical and Applied Sciences, Pondicherry University 1 , Puducherry 605014,