Autonomous Signaling and Recording of Electrical and Photodegradation in Polymers

C Chuang Zhang (Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry) J Jie Liu R Rumeng Yang (State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences 155 Yangqiao West Road Fuzhou Fujian 350002 P. R. China) C Cong Zeng B Bo Chen Y Yu Dong H Haizhou Pei (State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian People's Republic of China) H Huiqian Hu (State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 P. R. China) S Shiyu Feng W Weiguo Huang

Abstract

Abstract Dielectric polymers are crucial to optoelectronic and spintronic devices. However, electrical stress and/or light irradiation significantly accelerate polymer degradation and can trigger catastrophic failures of many devices, especially in the presence of oxygen. The detection and early warning of these degradations remain challenging. Herein, a class of versatile fluorescent markers is introduced, capable of autonomously signaling and recording both electrical and photodegradation through a visually discernible warning characterized by pronounced fluorescent color changes (up to 195 nm redshift). These changes, induced by chemical reactions between embedded fluorophore indicators and oxygen or radicals generated during degradation, provide quantitative insights into the electrical properties of the polymers. Further, these fluorescent indicators demonstrate superior sensitivity with a limit of detection (LOD) of nmol (several times lower than the best reported values), rapid response (less than 5 s, the highest speed ever reported) to radicals, good memory behavior, excellent generality, and robust resistance to false‐positive signals compared to conventional methods, thus providing a robust approach to mitigate or even eliminate the risk of device failure.

Article Details

Volume / Issue Vol. 37, Issue 42
Published October 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

C

Chuang Zhang

Key Laboratory of Photochemistry, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry

J

Jie Liu

R

Rumeng Yang

State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences 155 Yangqiao West Road Fuzhou Fujian 350002 P. R. China

C

Cong Zeng

B

Bo Chen

Y

Yu Dong

H

Haizhou Pei

State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian People's Republic of China

H

Huiqian Hu

State Key Laboratory of Structural Chemistry Fujian Institute of Research on the Structure of Matter Chinese Academy of Sciences Fuzhou Fujian 350002 P. R. China

S

Shiyu Feng

W

Weiguo Huang