Auger recombination rates in narrow gap HgTe quantum wells

Abstract

A model for calculating the Auger recombination rate in narrow-gap quantum wells of HgTe/CdHgTe heterostructures has been developed. It has been shown that for correct calculation of the Auger recombination rate in such structures, it is necessary to take into account the impact ionization processes and the influence of free carriers on the electron–electron interaction. It has been found that the presence of free carriers can both increase and decrease the Auger recombination rate depending on the carrier concentration. The dependences of the recombination rate for quantum wells with a bandgap of 35 and 50 meV on the concentration of nonequilibrium carriers at four temperatures 8, 100, 200, and 300 K have been found. The Auger recombination rates have been found at concentrations corresponding to the light transparency of quantum wells and threshold carrier concentrations for laser generation. Estimates are given for the values of threshold current densities and threshold power densities of the exciting radiation.