Atomistic mechanisms of helium–dislocation loop interactions in molybdenum: Insights from a machine-learning moment tensor potential

Y Yufei Deng H Haipan Xiang (School of Physics and Electronics, Hunan University 1 , Changsha 410082,) Y Yangchun Chen (College of Materials Science and Engineering, Hunan University 2 , Changsha 410082,) D Dong Wang Y Yi Zhao (State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology) K Kun He H Huiqiu Deng (School of Physics and Electronics, Hunan University 1 , Changsha 410082,)

Abstract

Molybdenum (Mo) is a key structural material for advanced nuclear systems, yet under irradiation, the formation of helium (He) bubbles and dislocation loops leads to severe degradation. Understanding He–dislocation loop interactions at the atomic scale is essential for predicting long-term performance. In this work, we develop a machine-learning Moment Tensor Potential and perform molecular dynamics simulations to systematically study the interactions between He atoms and the primary interstitial-type dislocation loops (1/2 ⟨111⟩ and ⟨100⟩) in BCC Mo. Our results show that dislocation loops act as strong trapping sites for He, modifying its spatial distribution and promoting heterogeneous nucleation of He clusters, with the ⟨100⟩ loop having a stronger effect. Conversely, He enhances loop growth by absorbing self-interstitial atoms, a process that intensifies with He concentration. A pronounced pinning effect of He on loop glide is observed, effectively immobilizing loops at 600 and 1200 K, though thermal activation at 1800 K partially releases this pinning. This study elucidates the mutual enhancement mechanism between He and dislocation loops, offering fundamental insights for designing radiation-resistant Mo alloys.

Article Details

Volume / Issue Vol. 139, Issue 8
Published February 28, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (7)

Y

Yufei Deng

H

Haipan Xiang

School of Physics and Electronics, Hunan University 1 , Changsha 410082,

Y

Yangchun Chen

College of Materials Science and Engineering, Hunan University 2 , Changsha 410082,

D

Dong Wang

Y

Yi Zhao

State Key Laboratory of Quantum Functional Materials, School of Physical Science and Technology

K

Kun He

H

Huiqiu Deng

School of Physics and Electronics, Hunan University 1 , Changsha 410082,