Atomically switchable giant spontaneous Hall effect in iridate/scandate superlattices

H Haiyang Zhang (School of Nano-Tech and Nano-Bionics) Y Yuanxi Liang (Institutes of Physical Science and Information Technology, Anhui University 1 , Hefei 230601,) X Xiangnan Xie (College of Science, National University of Defense Technology 4 , Changsha 410073,) D Deyang Li E Enyang Men J Jingxin Chen Z Zhihan Qiao H Hangtian Wang (Anhui Provincial Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences 1 , Hefei, Anhui 230031,) J Junlei Jiang (Anhui Provincial Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences 1 , Hefei, Anhui 230031,) H Han Zhang Y Yizhou Liu M Mingliang Tian D Dongsheng Song L Lin Hao

Abstract

The competition between incompatible oxygen octahedral tilting modes across heterointerfaces offers a powerful, yet underexplored, avenue to discover emergent phenomena. Here, we report an atomically switchable giant spontaneous Hall effect (SHE) in nTbScO3/10SrIrO3 superlattices. By controlling the TbScO3 spacer thickness with a single-unit-cell precision, we observed an abrupt increase of SHE at n = 1, above which SHE is significantly suppressed to a Berry curvature dominated level. Synchrotron x-ray diffraction and scanning transmission electron microscopy reveal that this switching behavior arises from a nontrivial modulation of octahedral tilting in the superlattice unit, leading to an incipient modulation in magnetic structure.

Article Details

Volume / Issue Vol. 139, Issue 23
Published June 21, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (14)

H

Haiyang Zhang

School of Nano-Tech and Nano-Bionics

Y

Yuanxi Liang

Institutes of Physical Science and Information Technology, Anhui University 1 , Hefei 230601,

X

Xiangnan Xie

College of Science, National University of Defense Technology 4 , Changsha 410073,

D

Deyang Li

E

Enyang Men

J

Jingxin Chen

Z

Zhihan Qiao

H

Hangtian Wang

Anhui Provincial Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences 1 , Hefei, Anhui 230031,

J

Junlei Jiang

Anhui Provincial Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences 1 , Hefei, Anhui 230031,

H

Han Zhang

Y

Yizhou Liu

M

Mingliang Tian

D

Dongsheng Song

L

Lin Hao