Atomically Precise Ruddlesden–Popper Faults Induced Enhanced Emission in Ligand Stabilized Mixed Halide Perovskites

S Somnath Mahato (Łukasiewicz Research Network – PORT Polish Centre for Technology Development Stabłowicka 147 Wrocław 54‐066 Poland) B Baidyanath Roy (School of Nano Science and Technology Indian Institute of Technology Kharagpur Kharagpur 721302 India) S Shaona Bose (Department of Physics Indian Institute of Technology Kharagpur Kharagpur 721302 India) S Satayender K. Sangwan (Department of Physics Indian Institute of Technology Kharagpur Kharagpur 721302 India) N Narayan Chandra Das (Rubber Technology Center Indian Institute of Technology Kharagpur 721302 India) M Muhammad Danang Birowosuto S Samit K. Ray (Department of Physics Indian Institute of Technology Kharagpur Kharagpur 721302 India)

Abstract

Abstract Atomic‐resolution imaging of Ruddlesden–Popper (RP) interfaces is challenging due to their concealment within perovskite nanocrystals (NCs) and the inherent limitations of conventional characterization techniques. In this study, distinctly oriented RP faults have been detected using double‐Cs‐corrected high‐angle annular dark‐field scanning transmission electron microscopy (STEM). A simple yet reliable STEM approach to achieve atomically precise identification of Pb, Cs, Br, and I atoms and analyze their spatial atomic arrangements in a single NC is employed. In addition, dislocations caused by lattice mismatch at grain boundaries (GBs) are identified. Lattice strain in GBs and RPs is determined and quantified, revealing that neither of these planar defects introduces the deep trap levels. Therefore, in absence of Pb dangling bonds or Pb─Pb bonds in GBs and RPs plays a crucial role in stabilizing NCs and preventing ion migration. Incorporating n ‐octylammonium iodide in pristine CsPbBr 3 quantum dots leads to the formation of CsPbBr 3− x I x NCs, resulting in a significant redshift in electroluminescence (≈496–623 nm) with enhanced intensity (≈79%), attributed to higher exciton lifetime, increased exciton binding energy, and improved carrier confinement in flexible light‐emitting devices. Density functional theory calculations confirm that additional carriers localized at the interface enhance electron–hole recombination, ensuring stable charge transportation for lighting devices.

Article Details

Volume / Issue Vol. 37, Issue 43
Published October 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (7)

S

Somnath Mahato

Łukasiewicz Research Network – PORT Polish Centre for Technology Development Stabłowicka 147 Wrocław 54‐066 Poland

B

Baidyanath Roy

School of Nano Science and Technology Indian Institute of Technology Kharagpur Kharagpur 721302 India

S

Shaona Bose

Department of Physics Indian Institute of Technology Kharagpur Kharagpur 721302 India

S

Satayender K. Sangwan

Department of Physics Indian Institute of Technology Kharagpur Kharagpur 721302 India

N

Narayan Chandra Das

Rubber Technology Center Indian Institute of Technology Kharagpur 721302 India

M

Muhammad Danang Birowosuto

S

Samit K. Ray

Department of Physics Indian Institute of Technology Kharagpur Kharagpur 721302 India