Atomic step guided self-assembled growth of indium nanowires on germanium

Abstract

In-plane ordered superconducting nanowires can serve as building blocks for superconducting networks, with potential applications in single-photon detectors and superconducting circuits. Here, we demonstrate a method for growing atomic-step-guided, self-assembled indium (In) nanowires on germanium (Ge). By depositing a single atomic layer of arsenic (As) on the Ge surface, an unreconstructed substrate is formed, featuring atomic terraces that are devoid of bonding sites. The As/Ge surface allows deposited In atoms to diffuse to the step edges and form ordered nanowires. This growth method could potentially be applied to various superconducting metals, offering high-density nanowire templates for constructing on-chip superconducting circuits.