Atomic-scale mechanism of anisotropic ion migration in 2D Bi2O2Se nanodevices

Ke Qu

Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering

Jianwei Zhang

Biotech Drug Research Center, Shanghai Institute of Materia Medica, Chinese Academy of Sciences

Jianchu Chen

Chengshi Yao

Jun Zeng

Haonan Wang

Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering

Tianjiao Xin

Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering (School of Integrated Circuits Science and Engineering), East China Normal University, Shanghai, China.

Wei-Ting Chen

Ying-Hao Chu

Pan Liu

Rong Huang

Yan Cheng

Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering (School of Integrated Circuits Science and Engineering), East China Normal University, Shanghai, China.

Zhenzhong Yang

Key Laboratory of Polar Materials and Devices (MOE), Department of Electronics, School of Information and Electronic Engineering

Haibo Yang

Chungang Duan

Key Laboratory of Polar Materials and Devices (MOE), School of Information and Electronic Engineering (School of Integrated Circuits Science and Engineering), East China Normal University, Shanghai, China.

Peng Gao