Asymmetric Stress Engineering of Dense Dislocations in Brittle Superconductors for Strong Vortex Pinning

M Meng Han C Chiheng Dong (Key Laboratory of Applied Superconductivity Institute of Electrical Engineering Chinese Academy of Sciences Beijing 100190 P. R. China) C Chao Yao (State Key Laboratory for Mechanical Behavior of Materials and School of Materials Science and Engineering, Xi'an Jiaotong University 2 , Xi'an, Shaanxi 710049,) Z Zhihao Zhang Q Qinghua Zhang Y Yue Gong H He Huang D Dongliang Gong D Dongliang Wang X Xianping Zhang F Fang Liu Y Yuping Sun (Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS) Z Zengwei Zhu J Jianqi Li J Junyi Luo S Satoshi Awaji (Institute for Materials Research, Tohoku University 1 , Sendai 980-8577,) X Xiaolin Wang (School of Pharmacy and State Key Laboratory of Quality Research in Chinese Medicine) J Jianxin Xie H Hideo Hosono (National Institute for Materials Science (NIMS)) Y Yanwei Ma

Abstract

Abstract Large lossless currents in high‐temperature superconductors (HTS) critically rely on dense defects with suitable size and dimensionality to pin vortices, with dislocations being particularly effective due to their 1D geometry to interact extensively with vortex lines. However, in non‐metallic compounds such as HTS with rigid lattices, conventional deformation methods typically lead to catastrophic fracture rather than dislocation‐mediated plasticity, making it a persistent challenge to introduce dislocations at high density. Here, an asymmetric stress field strategy is proposed using extrusion to directly nucleate a high density of dislocations in HTS by activating shear‐driven lattice slip and twisting under superimposed hydrostatic compression. As demonstrated in iron‐based superconductors (IBS), atomic displacements of ≈1 Å trigger the formation of tilted dislocation lines with a density approaching that of metals. With further structural refinement, these dislocations serve as strong pinning centers that lead to a fivefold enhancement in the current‐carrying capacity of IBS at 33 tesla (T), along with low anisotropy and a large irreversibility field. This work not only establishes a scalable route to engineer pinning landscapes in HTS but also offers a generalizable framework for manipulating dislocation structures in rigid crystalline systems.

Article Details

Volume / Issue Vol. 37, Issue 44
Published November 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (20)

M

Meng Han

C

Chiheng Dong

Key Laboratory of Applied Superconductivity Institute of Electrical Engineering Chinese Academy of Sciences Beijing 100190 P. R. China

C

Chao Yao

State Key Laboratory for Mechanical Behavior of Materials and School of Materials Science and Engineering, Xi'an Jiaotong University 2 , Xi'an, Shaanxi 710049,

Z

Zhihao Zhang

Q

Qinghua Zhang

Y

Yue Gong

H

He Huang

D

Dongliang Gong

D

Dongliang Wang

X

Xianping Zhang

F

Fang Liu

Y

Yuping Sun

Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS

Z

Zengwei Zhu

J

Jianqi Li

J

Junyi Luo

S

Satoshi Awaji

Institute for Materials Research, Tohoku University 1 , Sendai 980-8577,

X

Xiaolin Wang

School of Pharmacy and State Key Laboratory of Quality Research in Chinese Medicine

J

Jianxin Xie

H

Hideo Hosono

National Institute for Materials Science (NIMS)

Y

Yanwei Ma