Architecture of 3D magnetic domain wall memory for suppressing bit-shift error
Abstract
We propose an architecture for the suppression of magnetic domain wall shift error in 3D magnetic domain wall memory, which utilizes the spatially modulated perpendicular magnetic anisotropy (PMA) of magnetic layers that are deposited on the side walls of multilayers of different oxide materials. We experimentally identified the oxide material candidates for such implementation and found that CrOx can generate the largest PMA while GdOx generates the smallest PMA of Pt/Co/Pt multilayers. Our proposed architecture can be a key to realizing 3D magnetic domain wall racetrack memory with low bit-shift error.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (3)
Pham Nam Hai
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , Tokyo 152-8550,
Takanori Shirokura
Department of Electrical and Electronic Engineering, Institute of Science Tokyo 1 , 2-12-1 Ookayama, Meguro City, Tokyo 152-8552,
Nguyen Huynh Duy Khang
Department of Physics, Ho Chi Minh City University of Education 3 , 280 An Duong Vuong Street, District 5, Ho Chi Minh City 738242,