Antisolvent‐Free Dual‐Anion Regulation for High‐Efficient Sn‐Pb and All‐perovskite Tandem Solar Cells

C Chen Zhang (Shenzhen Institute for Quantum Science and Engineering, Department of Chemistry, and Department of Physics) Z Zhelu Hu J Jinpei Wang J Jianbin Zhu (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing 211816 China) Z Zhangquan Hu (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing 211816 China) W Wenxiu Dang (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing China) C Chunyu Guo Q Qiushi Li (State Key Laboratory of Superhard Materials, College of Physics, Jilin University) J Jinxian Yang (State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing 211816 China) B Bing Zhang X Xueqin Ran P Ping Li Q Qingxun Guo L Lingfeng Chao Y Yingdong Xia L Lionel Aigouy (Laboratoire de Physique et d’Etude des Matériaux (LPEM), CNRS, ESPCI Paris, PSL Research University, Sorbonne Université 1 , 10 rue Vauquelin, Paris F-75231,) Z Zhuoying Chen (Laboratoire de Physique et d’Etude des Matériaux (LPEM), CNRS, ESPCI Paris, PSL Research University, Sorbonne Université 1 , 10 rue Vauquelin, Paris F-75231,) Y Yonghua Chen W Wei Huang

Abstract

AbstractMixed tin‐lead (Sn‐Pb) perovskites are integral to all‐perovskite tandem solar cells (TSCs), offering significant potential to surpass the theoretical efficiency limits of single‐junction solar cells. However, the rapid crystallization of Sn‐Pb perovskite thin films and the propensity of Sn2+ to oxidize into Sn4+ remain critical challenges, hindering device performance and stability. Herein, it is demonstrated that a multifunctional dual‐anion synergistic regulation strategy to fabricate high‐quality MA‐free Cs0.1FA0.9Pb0.5Sn0.5I3 perovskite thin films with superior morphology and crystallinity via a simplified antisolvent‐free spin‐coating process. Acetate anions (Ac−) derived from formamidinium acetate (FAAc) effectively regulate crystallization kinetics and mitigate Sn2+ oxidation via intermediate phase formation and anion exchange process. Simultaneously, the combination of Ac− and thiocyanate anions (SCN−) from guanidinium thiocyanate (GuaSCN) promotes larger crystal grain growth and stabilizes Sn2+ via strong coordination interactions. The dual‐anion strategy effectively minimizes grain boundaries, suppresses non‐radiative recombination, and optimizes the energy level alignment at interfaces. As a result, the champion single‐junction Sn‐Pb perovskite solar cell (PSC) achieves an impressive power conversion efficiency (PCE) of 23.26%, setting a new benchmark for Sn‐Pb PSCs fabricated without antisolvent. While all‐perovskite TSCs reach 28.07% efficiency with remarkable operational stability, retaining 81% of initial performance after 600 h under maximum power point tracking.

Article Details

Volume / Issue Vol. 37, Issue 32
Published August 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (19)

C

Chen Zhang

Shenzhen Institute for Quantum Science and Engineering, Department of Chemistry, and Department of Physics

Z

Zhelu Hu

J

Jinpei Wang

J

Jianbin Zhu

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing 211816 China

Z

Zhangquan Hu

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing 211816 China

W

Wenxiu Dang

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing China

C

Chunyu Guo

Q

Qiushi Li

State Key Laboratory of Superhard Materials, College of Physics, Jilin University

J

Jinxian Yang

State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University Nanjing 211816 China

B

Bing Zhang

X

Xueqin Ran

P

Ping Li

Q

Qingxun Guo

L

Lingfeng Chao

Y

Yingdong Xia

L

Lionel Aigouy

Laboratoire de Physique et d’Etude des Matériaux (LPEM), CNRS, ESPCI Paris, PSL Research University, Sorbonne Université 1 , 10 rue Vauquelin, Paris F-75231,

Z

Zhuoying Chen

Laboratoire de Physique et d’Etude des Matériaux (LPEM), CNRS, ESPCI Paris, PSL Research University, Sorbonne Université 1 , 10 rue Vauquelin, Paris F-75231,

Y

Yonghua Chen

W

Wei Huang