Anomalous Phonon Softening with Inherent Strain in Wrinkled Monolayer WSe <sub>2</sub>

D Dong Hyeon Kim (Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea) J Jaekak Yoo (Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea) H Hyeong Chan Suh (Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea) Y Yo Seob Won (Department of Energy Science Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea) S Sung Hyuk Kim (Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea) D Dong‐Joon Yi (Department of Electronic Engineering Hanyang University (HYU) Seoul 04763 Republic of Korea) B Byeong Geun Jeong (Department of Energy Science Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea) C Chanwoo Lee D Dongki Lee (Department of Nanotechnology and Advanced Materials Engineering Seoul 05006 Republic of Korea) K Ki Kang Kim S Seung Mi Lee E Eui Kwan Koh (Korea Basic Science Institute Seoul 02855 Republic of Korea) M Mun Seok Jeong (Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea)

Abstract

Abstract Local deformation is a control knob to dynamically tune the electronic band structure of 2D semiconductors. This study demonstrates the local strain‐dependent phonon properties of monolayer tungsten diselenide, which are investigated by using the scanning tunneling microscopy‐based tip‐enhanced Raman spectroscopy. The anomalous appearance and softening of the Raman‐inactive out‐of‐plane mode are first revealed, which exhibits equivalent behavior to other principal phonons of tungsten diselenide. Local strain calculations unveiled the linear proportionalities of phonon nature on strain and it facilitates the derivation of Grüneisen parameter by experimental and theoretical approaches. Additionally, the origins of the anomalous appearance of the Raman‐inactive mode are clearly proved in both classical physics and quantum mechanics. Especially quantum mechanical calculations have precisely described strain‐induced selection rule relaxation by polarizability changes. The first discovery provides a fundamental understanding of the strain‐dependent phonon properties, as well as suggesting a new distinct strain indicator, mode, for strain engineering.

Article Details

Volume / Issue Vol. 37, Issue 35
Published September 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (13)

D

Dong Hyeon Kim

Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea

J

Jaekak Yoo

Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea

H

Hyeong Chan Suh

Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea

Y

Yo Seob Won

Department of Energy Science Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

S

Sung Hyuk Kim

Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea

D

Dong‐Joon Yi

Department of Electronic Engineering Hanyang University (HYU) Seoul 04763 Republic of Korea

B

Byeong Geun Jeong

Department of Energy Science Sungkyunkwan University (SKKU) Suwon 16419 Republic of Korea

C

Chanwoo Lee

D

Dongki Lee

Department of Nanotechnology and Advanced Materials Engineering Seoul 05006 Republic of Korea

K

Ki Kang Kim

S

Seung Mi Lee

E

Eui Kwan Koh

Korea Basic Science Institute Seoul 02855 Republic of Korea

M

Mun Seok Jeong

Department of Physics Hanyang University (HYU) Seoul 04763 Republic of Korea