Journal of Applied Physics

Annealing reduces leakage current in MBE grown AlScN and AlYN films

R Rishabh Singh D Debaditya Bhattacharya (School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,) C Chandrashekhar Prakash Savant (Department of Materials Science and Engineering, Cornell University 3 , Ithaca, New York 14853,) M Madhav Ramesh (School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,) N Nikilesh Veeraraghavan (Department of Materials Science and Engineering, Cornell University 3 , Ithaca, New York 14853,) T Thai-Son Nguyen (Department of Materials Science and Engineering, Cornell University 2 , Ithaca, New York 14853,) H Huili Grace Xing (Institute of Materials and Systems for Sustainability, Nagoya University 1 , Nagoya 464-8601,) D Debdeep Jena (School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853,)

Abstract

Ternary aluminum scandium nitride (AlScN) and aluminum yttrium nitride (AlYN) are emerging wide-bandgap piezoelectric and ferroelectric materials with significant potential for next-generation electronic devices. This work investigates the impact of post-growth annealing on the structural, electrical, and piezoelectric properties of AlScN and AlYN thin films grown by plasma-assisted by molecular beam epitaxy on tungsten electrodes. Annealing is performed in vacuum, air, and nitrogen atmospheres at temperatures ranging from 750 to 1100 °C. It is observed that annealing in air and nitrogen lowers the leakage current in AlScN and AlYN films. Piezoelectric coefficient (d33) enhancements as high as 137 pm/V for AlScN and 8.05 pm/V for AlYN are observed for less leaky, nitrogen-annealed samples at 750 °C. Preservation of ferroelectric switching properties post-annealing is confirmed by piezo-response force microscopy and PUND measurements. These findings highlight the role of thermal treatments on the performance of AlScN and AlYN for piezoelectric, ferroelectric, and high-K dielectric device applications.

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Article Details

Volume / Issue Vol. 140, Issue 4
Published July 28, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics
ISSN: 0021-8979 Physical Sciences

Authors (8)

R

Rishabh Singh

D

Debaditya Bhattacharya

School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,

C

Chandrashekhar Prakash Savant

Department of Materials Science and Engineering, Cornell University 3 , Ithaca, New York 14853,

M

Madhav Ramesh

School of Electrical and Computer Engineering, Cornell University 1 , Ithaca, New York 14853,

N

Nikilesh Veeraraghavan

Department of Materials Science and Engineering, Cornell University 3 , Ithaca, New York 14853,

T

Thai-Son Nguyen

Department of Materials Science and Engineering, Cornell University 2 , Ithaca, New York 14853,

H

Huili Grace Xing

Institute of Materials and Systems for Sustainability, Nagoya University 1 , Nagoya 464-8601,

D

Debdeep Jena

School of Electrical and Computer Engineering, Cornell University 2 , Ithaca, New York 14853,

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