Anisotropic magneto-transport properties of semimetallic LaNiSb3

H Haribrahma Singh (Department of Chemistry, Indian Institute of Technology Delhi 1 , New Delhi 110016,) A Aarti Gautam (Department of Chemistry, Indian Institute of Technology Delhi 1 , New Delhi 110016,) P Prabuddha Kant Mishra (Department of Chemistry, Indian Institute of Technology Delhi 1 , New Delhi 110016,) R Rie Y. Umetsu (Institute for Materials Research, Tohoku University 2 , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577,) A Ashok Kumar Ganguli (Department of Chemistry, Indian Institute of Technology Delhi 1 , New Delhi 110016,)

Abstract

Single crystals of LaNiSb3 were synthesized using the Sn-flux method. Structural characterization confirms that LaNiSb3 crystallizes in the orthorhombic Pbcm space group with lattice parameters a = 13.0970(2) Å, b = 6.1400(4) Å, and c = 12.1270(4) Å. Electrical resistivity measurements demonstrate metallic behavior over the entire temperature range of 3–300 K. The magnetoresistance (MR) exhibits a positive anisotropic response, attaining a maximum of 8% for H∥b, with a pronounced crossover from quadratic to nearly linear field dependence. Angular-dependent MR measurements reveal a pronounced twofold symmetry upon magnetic-field rotation within both the ab and ac crystallographic planes up to 50 K, indicating anisotropic charge transport. Hall resistivity measurements show predominantly electron-type conduction at high temperatures, with an increasing hole contribution upon cooling. The multiband character is further corroborated by the violation of Kohler’s scaling and is well described within a semiclassical two-band framework. Collectively, these results suggest LaNiSb3 has anisotropic multiband electronic transport and could be a compelling candidate to explore structure–property correlation as a topological semimetal.

Article Details

Volume / Issue Vol. 139, Issue 22
Published June 14, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

H

Haribrahma Singh

Department of Chemistry, Indian Institute of Technology Delhi 1 , New Delhi 110016,

A

Aarti Gautam

Department of Chemistry, Indian Institute of Technology Delhi 1 , New Delhi 110016,

P

Prabuddha Kant Mishra

Department of Chemistry, Indian Institute of Technology Delhi 1 , New Delhi 110016,

R

Rie Y. Umetsu

Institute for Materials Research, Tohoku University 2 , 2-1-1 Katahira, Aoba-ku, Sendai 980-8577,

A

Ashok Kumar Ganguli

Department of Chemistry, Indian Institute of Technology Delhi 1 , New Delhi 110016,