An investigation into low-lying electronic states of CH3S2 via threshold photoelectron imaging

C Chengxiang Jiao (School of Medical Imaging, Wannan Medical College 1 , Wuhu 241002,) X Xiaojian Li (Anhui Province Key Laboratory for Control and Applications of Optoelectronic Information Materials) Q Qiaolin Wang (Anhui Province Key Laboratory for Control and Applications of Optoelectronic Information Materials) Z Zhengbo Qin (Anhui Province Key Laboratory for Control and Applications of Optoelectronic Information Materials) J Junyao Zhang (National Key Laboratory of Particle Transport and Separation Technology) J Jun Chen

Abstract

Threshold photoelectron imaging of CH3S2− was performed, providing the electronic spectroscopy information of the CH3S2 radical. This allows for the accurate determination of the electron affinity of CH3S2 (EA = 1.757 ± 0.002 eV) and the term energy of the first vibrational excited state (T0 = 1.037 ± 0.005 eV) to be directly determined from the experimental spectra. The vibrational characteristics were assigned mainly to the S–S stretching mode in the ground state (X2A″), as well as the S–S–C bending mode in the first excited state (12A′) in conjunction with Franck–Condon simulations. The photoelectron angular distributions indicate that the photodetachment process predominantly involves two different molecular orbitals of CH3S2−. In addition, angular filtering photoelectron spectra were employed to further support the assignment of the spectral bands.

Article Details

Volume / Issue Vol. 164, Issue 12
Published March 28, 2026
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (6)

C

Chengxiang Jiao

School of Medical Imaging, Wannan Medical College 1 , Wuhu 241002,

X

Xiaojian Li

Anhui Province Key Laboratory for Control and Applications of Optoelectronic Information Materials

Q

Qiaolin Wang

Anhui Province Key Laboratory for Control and Applications of Optoelectronic Information Materials

Z

Zhengbo Qin

Anhui Province Key Laboratory for Control and Applications of Optoelectronic Information Materials

J

Junyao Zhang

National Key Laboratory of Particle Transport and Separation Technology

J

Jun Chen