An Analysis of Components and Enhancement Strategies for Advancing Memristive Neural Networks

H Hyungjun Park J Joon‐Kyu Han (Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul Republic of Korea) S Seongpil Yim (Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of Korea) D Dong Hoon Shin T Tae Won Park (Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 South Korea) K Kyung Seok Woo (Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea) S Soo Hyung Lee J Jae Min Cho (Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of Korea) H Hyun Wook Kim T Taegyun Park (Department of Clinical Research Design and Evaluation, Samsung Advanced Institute for Health Science and Technology, Sungkyunkwan University, Seoul, Republic of Korea (D.K., J.H., T.P., J.C.).) C Cheol Seong Hwang

Abstract

AbstractAdvancements in artificial intelligence (AI) and big data have highlighted the limitations of traditional von Neumann architectures, such as excessive power consumption and limited performance improvement with increasing parameter numbers. These challenges are significant for edge devices requiring higher energy and area efficiency. Recently, many reports on memristor‐based neural networks (Mem‐NN) using resistive switching memory have shown efficient computing performance with a low power requirement. Even further performance optimization can be made using engineering resistive switching mechanisms. Nevertheless, systematic reviews that address the circuit‐to‐material aspects of Mem‐NNs, including their dedicated algorithms, remain limited. This review first categorizes the memristor‐based neural networks into three components: pre‐processing units, processing units, and learning algorithms. Then, the optimization methods to improve integration and operational reliability are discussed across materials, devices, circuits, and algorithms for each component. Furthermore, the review compares recent advancements in chip‐level neuromorphic hardware with conventional systems, including graphic processing units. The ongoing challenges and future directions in the field are discussed, highlighting the research to enhance the functionality and reliability of Mem‐NNs.

Article Details

Volume / Issue Vol. 37, Issue 8
Published February 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (11)

H

Hyungjun Park

J

Joon‐Kyu Han

Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul Republic of Korea

S

Seongpil Yim

Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of Korea

D

Dong Hoon Shin

T

Tae Won Park

Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 South Korea

K

Kyung Seok Woo

Graduate School of Semiconductor Materials and Devices Engineering Ulsan National Institute of Science and Technology (UNIST) Ulsan Republic of Korea

S

Soo Hyung Lee

J

Jae Min Cho

Department of Materials Science and Engineering and Inter‐University Semiconductor Research Center Seoul National University Seoul 08826 Republic of Korea

H

Hyun Wook Kim

T

Taegyun Park

Department of Clinical Research Design and Evaluation, Samsung Advanced Institute for Health Science and Technology, Sungkyunkwan University, Seoul, Republic of Korea (D.K., J.H., T.P., J.C.).

C

Cheol Seong Hwang