All‐Solid‐State, Ferroelectric‐Graded‐Doping Reconfigurable Molybdenum Ditelluride Devices

Abstract

ABSTRACT 2D material‐based reconfigurable devices present a compelling approach to advancing system integration and functionality in the post‐Moore era. The all‐solid‐state design offers enhanced reliability and scalability of reconfigurable devices. However, realizing multifunctional reconfigurability in simple all‐solid‐state configurations remains a significant challenge. In this work, we address this challenge through a ferroelectric‐graded‐doping (FeGD) strategy to develop an all‐solid‐state 2D reconfigurable device featuring both structural simplicity and functional richness. The device incorporates a poly(vinylidene fluoride‐trifluoroethylene) (P(VDF‐TrFE)) ferroelectric layer coupled with a 2D ambipolar MoTe 2 channel, enabling the integration of 12 distinct reconfigurable functionalities within a single‐gate device structure. These functionalities span nonvolatile memory operations, neuromorphic computing capabilities including both homosynaptic and heterosynaptic plasticity, as well as multiple in‐memory logic operations. The device demonstrates exceptional performance metrics, achieving a sub‐millisecond reconfiguration speed (<1 ms), an extended retention time up to 10 7 s and outstanding on/off ratio exceeding 10 6 for nonvolatile memory operations, and large on/off ratios higher than 10 3 for fundamental logic operations (NAND, AND, OR, and NOR) and even more complex logic functions (IMP, RIMP, NIMP, and RNIMP), thereby establishing a versatile platform for next‐generation reconfigurable electronics.