All‐in‐One Molecule Regulated Buried Interface and Crystallization of Tin–Lead Perovskite for Efficient All‐Perovskite Tandem Solar Cells
Abstract
Abstract Mixed tin–lead (Sn–Pb) perovskite solar cells (PSCs) are critical for advancing all–perovskite tandem solar technologies, as they resolve the efficiency limitations of single‐junction devices. However, the widely used hole transport layer (HTL) poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) restricts performance and durability due to its acidic nature and moisture absorption. Additionally, the rapid crystallization of Sn‐containing perovskites hinders the fabrication of uniform, high‐quality mixed SnPb perovskite films. To address these challenges, this study incorporates 4‐sulfophthalic acid triammonium salt (SATS) as a multifunctional additive into both the PEDOT:PSS layer and perovskite precursor solution. SATS modifies the physicochemical properties of PEDOT:PSS and slows perovskite crystallization, promoting films with enhanced crystallinity. Through these synergistic effects, the optimized single‐junction SnPb PSCs achieve a power conversion efficiency (PCE) of 23.85%. Integrating these devices into two‐terminal all‐perovskite tandem architectures further delivers a remarkable efficiency of 28.74%.
Article Details
Authors (15)
Xiaonan Jin
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University Nanjing Jiangsu 211816 China
Jiupeng Cao
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing China
Shunan Sui
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing China
Jiankai Xie
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University Nanjing Jiangsu 211816 China
Wenjian Yan
Lingui Han
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University Nanjing Jiangsu 211816 China
Jibiao Duan
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University Nanjing Jiangsu 211816 China
Meizhu Hu
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University Nanjing Jiangsu 211816 China
Huihui Zhang
Institute of Chemical Research of Catalonia (ICIQ), The Barcelona Institute of Science and Technology, Av. Països Catalans 16, 43007 Tarragona, Spain
Fangfang Wang
Jingjin Dong
State Key Laboratory of Flexible Electronics (LoFE) & Institute of Advanced Materials (IAM) School of Flexible Electronics (Future Technologies) Nanjing Tech University (NanjingTech) Nanjing China
Aifei Wang
Weihao Yuan
Wei Huang
Tianshi Qin