Adaptive Epitaxy of C‐Si‐Ge‐Sn: Customizable Bulk and Quantum Structures (Adv. Mater. 37/2025)
Article Details
Authors (16)
Omar Concepción
Institute of Semiconductor Nanoelectronics, Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich 2 , 52428 Jülich,
Ambrishkumar J. Devaiya
Peter Gruenberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany
Marvin H. Zoellner
IHP - Leibniz Institute for High Performance Microelectronics 1 , Frankfurt (Oder) 15236,
Markus A. Schubert
IHP–Leibniz Institut für innovative Mikroelektronik 15236 Frankfurt (Oder) Germany
Florian Bärwolf
Lukas Seidel
Institute of Semiconductor Engineering University of Stuttgart 70569 Stuttgart Germany
Vincent Reboud
CEA LETI Grenoble 38000 France
Andreas T. Tiedemann
Peter Gruenberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany
Jin‐Hee Bae
Peter Gruenberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany
Alexei Tchelnokov
CEA LETI Grenoble 38000 France
Qing‐Tai Zhao
Peter Gruenberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies Forschungszentrum Juelich 52428 Juelich Germany
Christopher A. Broderick
School of Physics University College Cork Cork T12 YN60 Ireland
Michael Oehme
Giovanni Capellini
IHP - Leibniz Institute for High Performance Microelectronics 1 , Frankfurt (Oder) 15236,
Detlev Grützmacher
Dan Buca
Institute of Semiconductor Nanoelectronics, Peter Grünberg Institute 9 (PGI 9) and JARA-Fundamentals of Future Information Technologies, Forschungszentrum Jülich 2 , 52428 Jülich,