Activating Halogen Circulation Enables Efficient and Stable Wide‐Bandgap Mixed‐Halide Perovskite Solar Cells

Y Yang Yang Q Qing Chang (Antitumor Assessment Core Facility, Memorial Sloan Kettering Cancer Center) J Jie Su (The State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Center of Hydrogen Science, Innovation Center for Future Materials, Zhangjiang Institute for Advanced Study) L Lingfeng Chao Y Yonglei Wang Z Zhiyuan Dai X Xiaofeng Huang S Siqing Nie (Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong 999077 China) P Pengfei Guo (The Hong Kong University of Science and Technology , , , ,) J Jun Yin Z Zhe Liu Y Yen‐Hung Lin (Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong 999077 China) A Alex K.‐Y. Jen (Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR) R Ruihao Chen H Hongqiang Wang

Abstract

Abstract Developing strategies to manage ion‐migration‐induced phase segregation in wide‐bandgap (WBG) perovskites is crucial for achieving high‐performance perovskite‐silicon tandem solar cells (TSCs). However, maintaining continuous suppression of phase segregation from the film crystallization process to device operation remains a significant challenge. The present study demonstrates an efficient strategy of activating halogen circulation in WBG perovskite by using halogen circulation agents (HCA) of N‐halosuccinimide molecules as the sustainable stabilizers, in order to achieve dynamic halogen equilibrium within the precursor solution and perovskite film, which blocks the migration path of Br − /I − ions both in crystallization and aging of WBG perovskites. Attempts on in situ dynamic monitoring of halide migration visually verified the enhanced stability by activated halogen circulation in both WBG films and devices. Consequently, present work achieves a champion efficiency up to 23.25% with a low V oc loss of 0.39 V in the 1.67‐eV‐bandgap device, and the HCA‐based devices can maintain 88% and 93% of their initial efficiencies over 1000 h under continuous illumination and 2500 h at 85 °C in N 2 atmosphere, respectively. As a proof of concept, the perovskite/silicon monolithic TSCs are fabricated to demonstrate a high V oc of 1.99 V and a high power conversion efficiency of 33.2%.

Article Details

Volume / Issue Vol. 37, Issue 11
Published March 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (15)

Y

Yang Yang

Q

Qing Chang

Antitumor Assessment Core Facility, Memorial Sloan Kettering Cancer Center

J

Jie Su

The State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Center of Hydrogen Science, Innovation Center for Future Materials, Zhangjiang Institute for Advanced Study

L

Lingfeng Chao

Y

Yonglei Wang

Z

Zhiyuan Dai

X

Xiaofeng Huang

S

Siqing Nie

Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong 999077 China

P

Pengfei Guo

The Hong Kong University of Science and Technology , , , ,

J

Jun Yin

Z

Zhe Liu

Y

Yen‐Hung Lin

Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Kowloon Hong Kong 999077 China

A

Alex K.‐Y. Jen

Department of Materials Science and Engineering City University of Hong Kong Kowloon Hong Kong SAR

R

Ruihao Chen

H

Hongqiang Wang