Achieving High‐Performance Multi‐Resonance Thermally Activated Delayed Fluorescence (MR‐TADF) Blue Emitter Using Benzothiophene Heterocyclic Fusion Strategy

R Runting Wang (State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China) Y Yingbo Lv (State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China) J Jingzhuo Bi (State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China) Q Quansheng Zheng (State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China) K Kangqiang Mo (State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China) Z Zhou‐An Xia (State Key Laboratory of Supramolecular Structure and Materials College of Chemistry Jilin University Changchun China) X Xinqi Yang (State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry) H Haichao Liu (Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering) S Shi‐Tong Zhang (State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China) B Bing Yang

Abstract

ABSTRACT To meet the growing demands in the field of ultra‐high‐definition display, multi‐resonance thermally activated delayed fluorescence (MR‐TADF) materials have attracted extensive attention due to their narrowband emission characteristics. However, the development of these materials still faces many challenges, such as limited chemical modification methods and severe device efficiency roll‐off. Herein, the benzothiophene (BZT) heterocyclic fusion strategy was adopted to chemically modify the classical single‐boron and dual‐boron MR‐TADF emitters into two new derivatives ( SS‐B and SS‐2B ). By combining theory with experiments, the intrinsic mechanism of the improvements in emission properties was revealed due to the fusion incorporation of BZT units, resulting in the high‐efficiency and high‐color‐purity doped blue organic light‐emitting diode (OLED) with effective suppression of efficiency roll‐off. The full width at half maximum (FWHM) of their electroluminescence spectra are only 26 and 29 nm for SS‐B and SS‐2B , respectively. Their maximum external quantum efficiencies (EQE max ) are as high as 34.34% and 37.23% respectively, and the EQE roll‐off of SS‐2B is only 4.9% at 100 cd·m −2 . This work not only provides a better understanding of the photophysical nature of boron/nitrogen (B/N) molecular systems, but also offers a new strategy for improving the electroluminescence performance of MR‐TADF materials.

Article Details

Volume / Issue Vol. 65, Issue 15
Published April 06, 2026
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (10)

R

Runting Wang

State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China

Y

Yingbo Lv

State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China

J

Jingzhuo Bi

State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China

Q

Quansheng Zheng

State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China

K

Kangqiang Mo

State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China

Z

Zhou‐An Xia

State Key Laboratory of Supramolecular Structure and Materials College of Chemistry Jilin University Changchun China

X

Xinqi Yang

State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry

H

Haichao Liu

Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering

S

Shi‐Tong Zhang

State Key Lab of Supramolecular Structure and Material College of Chemistry Jilin University Changchun P.R. China

B

Bing Yang