Achieving Charge‐Transfer from the Boron‐Vertices of <i>o</i> ‐Carborane: Dual‐Emission with a Shift of 505 nm (2.1 eV)
Abstract
Abstract The boron‐vertices of o ‐carborane have long been considered to be inert in conjugation with π‐substituents. Herein, we demonstrate that the boron vertices of o ‐carborane can be engineered to participate in intense charge‐transfer (CT) transitions. Through strategic design—appending electron‐donating carbazoles at the boron vertices—we synthesized three 9,12‐substituted o ‐carboranes ( 1 , 2a , and 2b ). While 1 only shows LE emission, compounds 2a and 2b , which contain phenyl groups at the carbon vertices, show unprecedented dual emission with a colossal gap of up to 505 nm (2.1 eV) between bands. Photophysical and theoretical studies reveal that photoexcitation triggers a unidirectional conversion from a locally excited (LE) state to a CT state, yielding the first direct evidence of CT from a boron‐functionalized donor into the carborane cage. This CT emission is highly sensitive to environment, exhibiting aggregation‐induced emission enhancement with quantum yields reaching 80%. Our findings disrupt the longstanding carbon‐centric view of carborane‐based luminescence, unveiling a new strategy to activate boron‐vertex participation in electronic conjugation, opening a pathway for the development of high‐performance dual‐emissive materials based on o ‐carborane.
Article Details
Authors (11)
Xiaoyang Xu
Xueyuan Zhao
Shuang Xu
Xinning Zhang
Qihao Wang
Lin Wu
The Department of Thoracic Medical Oncology Hunan Cancer Hospital/The Affiliated Cancer Hospital of Xiangya School of Medicine Central South University Changsha China
Xin Li
Junqing Shi
State Key Laboratory of Flexible Electronics (LOFE) & Institute of Flexible Electronics (IFE) Northwestern Polytechnical University Xi'an China
Jiani Ma
Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Provincial Key Laboratory of New Concept Sensors and Molecular Materials, School of Chemistry and Chemical Engineering
Lei Ji
Wei Huang