A Widely Tunable Spin‐Orbit Torque Device through the Silicon Compatible CMOS Platform

Abstract

Abstract Analogous to the manipulation of electrons in field‐effect transistors, achieving the voltage‐controlled spin‐orbit torque and spin current will become indispensable to next‐generation spintronic devices, enabling nonvolatile cache memory, spin logic, and other advanced functionalities. Recently, considerable progress has been realized in the electric field control of spin‐orbit torques. Due to the limitations of integration and operating voltage, the practical use of voltage‐controlled MRAM is still challenging. Here a tunable spin‐orbit torque device fully integrated within CMOS technology is reported with large tunability and low operating voltage. The proposed integrated MRAM devices with hybrid architectures exhibit significant acceleration in write speed and lower current thresholds. This could potentially facilitate the commercial exploitation of tunable spin‐orbitronic devices and is also promising for spin transistors and unconventional computing frameworks beyond Boolean logic.