A Study of the effect of eigenvalues on the Moore Gibson Thompson model under photoacoustic excitation of semiconductors

Abstract

Abstract Regarding this investigation, the Moore-Gibson-Thompson (MGT) model was developed with the impact of acoustic pressure. This research’s light is spotted on semiconductor material undergoing thermo-acoustic and optical deformation in the context of a theory of photo-thermoelasticity (PTE). The governing equations are formulated using a modified photo-excitation model, where (MGT) equation represents the heat conduction during processes of optical transport. This model represents the coupling between plasma, thermal, mechanical-elastic, and acoustic wave propagation. Analytical solutions for the main physical quantities are obtained utilizing the Laplace transform method combined with the vector–matrix differential equation method. Boundary conditions for the acoustic, plasma, and thermo-mechanical effects are applied at the outer surface of the medium. Numerical inversion of Laplace transforms is performed to obtain complete space–time solutions for primary fields. Silicon is utilized as a representative semiconductor material for numerical computations, with the results presented graphically and discussed with various influencing parameters. This study is significant because it provides a novel way to analyze the behavior of semiconducting materials under photo-acoustic excitation, applying the eigenvalue approach to a system previously modeled using simple methods. It fills existing gaps in the literature related to the application of the MGT model in semiconducting photo-acoustics and provides more detailed and reliable predictions for real-world applications.