A split gate double-channel asymmetric SiC trench MOSFET for improved gate oxide reliability and dynamic characteristics

F Feng Xu (Faculty of Pharmaceutical Sciences) Y Yonghao Dong F Fa Li F Fei Xie (State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China) P Pengfei Guo (The Hong Kong University of Science and Technology , , , ,) Y Yuxue Zhou Y Yongfeng Liu (State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China) X Xiangdong Meng R Rongxing Cao Y Yuxiong Xue

Article Details

Volume / Issue Vol. 15, Issue 1
Published November 26, 2025
ISSN 2045-2322
Publisher Nature Portfolio

Journal Info

Scientific Reports

Nature Portfolio

ISSN: 2045-2322 Open Access Life Sciences

Authors (10)

F

Feng Xu

Faculty of Pharmaceutical Sciences

Y

Yonghao Dong

F

Fa Li

F

Fei Xie

State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China

P

Pengfei Guo

The Hong Kong University of Science and Technology , , , ,

Y

Yuxue Zhou

Y

Yongfeng Liu

State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

X

Xiangdong Meng

R

Rongxing Cao

Y

Yuxiong Xue