A Simple Quinoid Building Block for Polymer Semiconductors with Tunable Polarity and High n‐Type Thermoelectric Performance

W Weipeng Sun S Sergio Gámez‐Valenzuela (Laboratory of Organic Electronics Department of Science and Technology Linköping University Norrköping Sweden) X Xiage Zhang J Jin‐Woo Lee (Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea) Z Zhicheng Zhong P Peng Wang S Suxiang Ma (Department of Materials Science and Engineering) H Hanqiang Wang B Bumjoon J. Kim (Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea) X Xugang Guo (Department of Materials Science and Engineering)

Abstract

Abstract π‐Conjugated polymers with deep‐positioned lowest unoccupied molecular orbital (LUMO) level and large electron mobility are highly pursued as n‐type organic thermoelectric materials. Herein, we synthesized a simple structured electron‐deficient quinoid building block, thieno[3,2‐ b ]thiophene‐2,5‐dione (TTD), via one step from a low‐cost starting material. Based on TTD, polymers PQD and PQTD were successfully developed, featuring remarkably low‐lying LUMO levels (−3.91 eV for PQD and −3.73 eV for PQTD), which greatly facilitate n‐doping process. Unexpectedly, it was found that charge carrier polarity of PQD and PQTD can be tuned from p‐type to ambipolar and finally to n‐type in organic field‐effect transistors after thermal treatment, an unprecedented phenomenon in polymer semiconductors. Organic thermoelectric devices based on n‐doped PQD films showed an excellent electrical conductivity up to 19.1 S cm −1 and a power factor of 36.7 µW m −1 K −2 . To the best of our knowledge, this PF value ranks the highest reported to date for n‐doped quinoid‐based polymers. This work underscores the great potential of structurally simple and readily accessible electron‐deficient quinoid TTD for the development of high‐performing n‐type polymer semiconductors.

Article Details

Volume / Issue Vol. 64, Issue 28
Published July 07, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (10)

W

Weipeng Sun

S

Sergio Gámez‐Valenzuela

Laboratory of Organic Electronics Department of Science and Technology Linköping University Norrköping Sweden

X

Xiage Zhang

J

Jin‐Woo Lee

Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

Z

Zhicheng Zhong

P

Peng Wang

S

Suxiang Ma

Department of Materials Science and Engineering

H

Hanqiang Wang

B

Bumjoon J. Kim

Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 Republic of Korea

X

Xugang Guo

Department of Materials Science and Engineering