A self-consistent field–matter approach for pump–probe measurements in ultrafast materials
Abstract
Quantitative interpretation of ultrafast pump–probe experiments requires a consistent treatment of the excitation stage, particularly under strong optical pumping where absorption saturation and interference effects become significant. We present a time-domain self-consistent framework that couples electromagnetic field propagation to semiconductor Maxwell–Bloch dynamics in thin absorbing layers. The model explicitly accounts for state filling, nonlinear absorption, and standing-wave effects without introducing phenomenological generation terms or adjustable scaling parameters. The approach is applied to low-temperature-grown GaAs layers deposited on gold mirrors, corresponding to a low-Q cavity configuration. Simulations quantitatively reproduce both the linear reflectivity oscillations as a function of layer thickness and the nonlinear saturation behavior observed experimentally. The maximum pump-induced reflectivity change is predicted from intrinsic material parameters alone. This framework provides a physically consistent basis for analyzing pump–probe measurements in multilayer absorbing structures and offers a predictive tool for the modeling and design of nonlinear semiconductor absorbers, including semiconductor saturable absorber mirrors.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (5)
M. Rimbert
Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,
Q. Fornasiero
Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,
J.-F. Lampin
Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,
M. Conforti
Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM), University of Lille, CNRS, UMR 8523 2 , F-59000 Lille,
E. Peytavit
Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,