A self-consistent field–matter approach for pump–probe measurements in ultrafast materials

M M. Rimbert (Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,) Q Q. Fornasiero (Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,) J J.-F. Lampin (Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,) M M. Conforti (Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM), University of Lille, CNRS, UMR 8523 2 , F-59000 Lille,) E E. Peytavit (Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,)

Abstract

Quantitative interpretation of ultrafast pump–probe experiments requires a consistent treatment of the excitation stage, particularly under strong optical pumping where absorption saturation and interference effects become significant. We present a time-domain self-consistent framework that couples electromagnetic field propagation to semiconductor Maxwell–Bloch dynamics in thin absorbing layers. The model explicitly accounts for state filling, nonlinear absorption, and standing-wave effects without introducing phenomenological generation terms or adjustable scaling parameters. The approach is applied to low-temperature-grown GaAs layers deposited on gold mirrors, corresponding to a low-Q cavity configuration. Simulations quantitatively reproduce both the linear reflectivity oscillations as a function of layer thickness and the nonlinear saturation behavior observed experimentally. The maximum pump-induced reflectivity change is predicted from intrinsic material parameters alone. This framework provides a physically consistent basis for analyzing pump–probe measurements in multilayer absorbing structures and offers a predictive tool for the modeling and design of nonlinear semiconductor absorbers, including semiconductor saturable absorber mirrors.

Article Details

Volume / Issue Vol. 139, Issue 24
Published June 28, 2026
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (5)

M

M. Rimbert

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,

Q

Q. Fornasiero

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,

J

J.-F. Lampin

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,

M

M. Conforti

Laboratoire de Physique des Lasers, Atomes et Molécules (PhLAM), University of Lille, CNRS, UMR 8523 2 , F-59000 Lille,

E

E. Peytavit

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN), Univ. Lille, CNRS, Univ. Polytechnique Hauts-de-France, UMR 8520 1 , F-59000 Lille,