A Quinoidal J‐Aggregated Indacendiselenophene Exhibiting High Responsivity in Ultra‐Narrowband Organic Photodetection

Q Qiao He K Kaiyang Wei (Department of Chemistry and Centre for Processable Electronics, Imperial College London London UK) D Davide Nodari (Department of Chemistry and Centre for Processable Electronics, Imperial College London London UK) A Adam V. Marsh (Department of Physical Science and Engineering King Abdullah University of Science & Technology (KAUST) Thuwal 23955–6900 Kingdom of Saudi Arabia) A Andrew J. P. White (Department of Chemistry and Centre for Processable Electronics, Imperial College London London UK) M Martina Rimmele Z Zhuping Fei (State Key Laboratory of Advanced Materials for Intelligent Sensing and Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Institute of Molecular Plus, Department of Chemistry) N Nicola Gasparini J Julianna Panidi (Department of Chemistry and Centre for Processable Electronics, Imperial College London London UK) M Martin Heeney (Division of Physical Sciences & Engineering, Chemistry Program)

Abstract

ABSTRACT Organic semiconductors that exhibit narrowband absorption in the near‐infrared (NIR) region are highly sought after for photodetector applications, yet achieving such behavior intrinsically remains a considerable challenge. We report a novel fused quinoidal tetracyanoindacenodiselenophene material (QIDSe‐C16) that forms solid‐state J‐aggregates producing a remarkably sharp absorption band with a full width at half‐maximum (FWHM) of 27 nm centred at 772 nm, closely matching that of its sulfur analogue (QIDT‐C16). Despite exhibiting similar optical and electrochemical characteristics, selenium substitution enhances charge‐carrier mobility and significantly improves device performance. Optimized organic phototransistors (OPTs) based on QIDSe‐C16 display ambipolar transport and excellent photoresponsivity, reaching 289 A W −1 at 780 nm illumination, which is an order of magnitude higher than QIDT‐C16‐based devices and among the best so‐far reported values. Our findings demonstrate that controlling solid‐state aggregation through heteroatom engineering offers an effective route to narrowband, filter‐free NIR photodetectors that combine spectral selectivity with high charge transport.

Article Details

Volume / Issue Vol. 38, Issue 47
Published August 01, 2026
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

Q

Qiao He

K

Kaiyang Wei

Department of Chemistry and Centre for Processable Electronics, Imperial College London London UK

D

Davide Nodari

Department of Chemistry and Centre for Processable Electronics, Imperial College London London UK

A

Adam V. Marsh

Department of Physical Science and Engineering King Abdullah University of Science & Technology (KAUST) Thuwal 23955–6900 Kingdom of Saudi Arabia

A

Andrew J. P. White

Department of Chemistry and Centre for Processable Electronics, Imperial College London London UK

M

Martina Rimmele

Z

Zhuping Fei

State Key Laboratory of Advanced Materials for Intelligent Sensing and Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Institute of Molecular Plus, Department of Chemistry

N

Nicola Gasparini

J

Julianna Panidi

Department of Chemistry and Centre for Processable Electronics, Imperial College London London UK

M

Martin Heeney

Division of Physical Sciences & Engineering, Chemistry Program