A Nonfused Ring Electron Acceptor with Aggregation‐Induced Emission Assistance Achieving Over 20% Efficiency in Organic Solar Cells

K Kun Li (Department of Materials Science, Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan) Q Qian Xie (Shenzhen Grubbs Institute, Department of Chemistry, and Guangming Advanced Research Institute) C Cunbin An (Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing People's Republic of China) J Jianbin Zhong (School of Physics and Materials Science, Guangzhou University 1 , Guangzhou 510006,) Y Yuan Yao C Chuangcheng Hong (School of Physics and Materials Science Guangzhou University Guang‐zhou 510006 P.R. China) Y Yu Chen H Hua Geng (Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing 100048 P.R. China) Y Yishi Wu (Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing China) W Wei Zhang Q Qing Liao (Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry) H Hongbing Fu (Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry)

Abstract

Abstract The development of nonfused ring electron acceptors (NFREAs) with high electroluminescence quantum efficiency (EQE EL ) is essential for advancing the commercialization of organic solar cells (OSCs), due to their low‐cost and minimal energy losses ( E loss ). However, designing such NFREAs remains a significant challenge. Herein, we present a medium‐bandgap NFREA, TT‐TCBr, which exhibits a high EQE EL of 1.0 × 10 −3 and an excellent electron mobility of 1.5 × 10 −4  cm 2  V −1  s −1 . Interestingly, TT‐TCBr shows enhanced photoluminescence quantum yield from solution (9.24%) to film (20.7%). In OSCs, the D18:TT‐TCBr‐based OSC achieves a good power conversion efficiency (PCE) of 13.20% with a high open‐circuit voltage of 1.09 V and a low nonradiative energy loss of 0.177 eV. Importantly, TT‐TCBr shows good miscibility with L8‐BO, leading to an increased exciton diffusion length and EQE EL in the L8‐BO: TT‐TCBr blend. When TT‐TCBr is introduced as a guest molecule into the D18:L8‐BO‐based OSC, E loss is reduced from 0.543 to 0.530 eV, resulting in a significantly increased PCE from 19.16% to 20.10%, which represents one of the highest PCEs reported for OSCs. This research will significantly contribute to the advancement of high‐performance guest materials for the rapid development of single‐junction OSCs.

Article Details

Volume / Issue Vol. 64, Issue 29
Published July 14, 2025
ISSN 1433-7851
Publisher Wiley

Journal Info

Angewandte Chemie International Edition

Wiley

ISSN: 1433-7851 Physical Sciences

Authors (12)

K

Kun Li

Department of Materials Science, Institute of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan

Q

Qian Xie

Shenzhen Grubbs Institute, Department of Chemistry, and Guangming Advanced Research Institute

C

Cunbin An

Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing People's Republic of China

J

Jianbin Zhong

School of Physics and Materials Science, Guangzhou University 1 , Guangzhou 510006,

Y

Yuan Yao

C

Chuangcheng Hong

School of Physics and Materials Science Guangzhou University Guang‐zhou 510006 P.R. China

Y

Yu Chen

H

Hua Geng

Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing 100048 P.R. China

Y

Yishi Wu

Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing China

W

Wei Zhang

Q

Qing Liao

Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry

H

Hongbing Fu

Beijing Key Laboratory for Optical Materials and Photonic Devices, Department of Chemistry