A NiAl-layered double hydroxides memristor with artificial synapse function and its Boolean logic applications

Abstract

In the era of artificial intelligence, there has been a rise in novel computing methods due to the increased demand for rapid and effective data processing. It is of great significance to develop memristor devices capable of emulating the computational neural network of the brain, especially in the realm of artificial intelligence applications. In this work, a memristor based on NiAl-layered double hydroxides is presented with excellent electrical performance, including analog resistive conversion characteristics and the effect of multi-level conductivity modulation. In addition, the device's conductance can be continuously adjusted by varying pulse width, interval, and amplitude. The successful replication of synaptic features has been achieved. In order to implement the functions of “NOT,” “AND,” and “OR,” a logic gate is constructed using two synaptic devices. The confirmation of the potential use of synaptic devices in brain-like computing was demonstrated. In addition, it demonstrates the potential of these devices in supporting computing models beyond von Neumann architecture.