A New Narrow‐Band Display Technology Based on Organic Light‐Emitting Transistors

Abstract

ABSTRACT Developing new narrow‐band display technology is crucial for next‐generation high‐definition displays. Organic light‐emitting transistors (OLETs), which integrate dual functionalities of current amplification from organic field‐effect transistor (OFET) and light emission from organic light‐emitting diode (OLED) within a single device, have emerged as a promising display technology with simplified circuitry and reducing power consumption. Over the past two decades, substantial progress has been achieved in OLET device architectures, efficiencies, and multifunctional applications. In particular, new lateral area‐emission OLETs, featuring a stacked OFET‐OLED architecture, intrinsically form a microcavity that offers great potential for effective spectral narrowing. In this Perspective, we summarize these impressive advances in the OLET field with a specific emphasis on narrow‐band‐emission OLETs based on laterally stacked device geometry. We further discuss prospective strategies for simultaneously enhancing efficiency and spectral narrowing, thereby advancing OLETs toward practical high‐definition, low‐power display applications.