A microscopic study into the role of grain boundaries in field-assisted protrusion growth and potential for current fluctuations in electron nanoemitters

Y Y. M. Pokhrel (Department of Electrical and Computer Engineering, Texas Tech University 1 , Lubbock, Texas 79409,) A A. L. Garner (School of Nuclear Engineering, Purdue University 2 , West Lafayette, Indiana 47907,) R R. P. Joshi (Department of Electrical and Computer Engineering, Texas Tech University 1 , Lubbock, Texas 79409,)

Abstract

Studies of metallic field emission devices during operation have reported fluctuations in current and local luminosity across the emitting surface that suggest a time-dependent evolution of surface structure and morphology. One possibility is the growth of surface nanoprotrusions (NPs) driven by high Maxwell stress arising from the externally applied electric field. This aspect is probed through three-dimensional, time-dependent molecular dynamics simulations for a quantitative predictive analysis. Our results indicate NP growth for electric fields at levels of 5 × 108 V/m or higher. Material ejection from NPs is also shown to be likely for high fields acting over an extended duration. The trends agree qualitatively with reports in the literature, demonstrating the role of grain boundaries as an enabling mechanism, showing that NP growth is synergistically strengthened by the presence of surface voids, and the possibility of dynamic current fluctuations.

Article Details

Volume / Issue Vol. 138, Issue 14
Published October 14, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (3)

Y

Y. M. Pokhrel

Department of Electrical and Computer Engineering, Texas Tech University 1 , Lubbock, Texas 79409,

A

A. L. Garner

School of Nuclear Engineering, Purdue University 2 , West Lafayette, Indiana 47907,

R

R. P. Joshi

Department of Electrical and Computer Engineering, Texas Tech University 1 , Lubbock, Texas 79409,