A Homoleptic Ga <sub>4</sub> Radical Anion: Isolation, Characterization, and Reactivity
Abstract
ABSTRACT We report the synthesis and characterization of a homoleptic Ga 4 radical anion ([Li + ]•[ 1 •− ]), prepared via a salt‐metathesis reaction between Cp*Ga (Cp* = pentamethylcyclopentadienyl) and [Li 2 (L)] (L = Me 2 Si(DipN) 2 ). Combined structural and computational analyses reveal a nearly planar geometry at the central gallium atom, with only minimal distortion toward a trigonal pyramidal geometry, and the unpaired spin density localized in its 4p orbital. Density functional theory (DFT) calculations elucidate the reaction mechanism for the formation of [Li + ]•[ 1 •− ], while N ‐heterocyclic carbene (NHC)‐trapping experiments led to the isolation of NHC‐stabilized digallyl digallenes ( 2a and 2b ) as well as a digallyl‐substituted gallium radical ( 3c ). Compound [Li + ]•[ 1 •− ] exhibits versatile gallium‐centered radical reactivity, including one‐electron oxidation with S 8 and facile E─E bond activation (E = S, Se, and I) toward PhS‐SPh, PhSe‐SePh, and I 2 .
Article Details
Authors (11)
Lijie Pei
College of Material Chemistry and Chemical Engineering Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education Hangzhou Normal University Hangzhou China
Yushuang Zhang
Cong Fan
College of Material Chemistry and Chemical Engineering Key Laboratory of Organosilicon Chemistry and Material Technology Ministry of Education Hangzhou Normal University Hangzhou China
Bing Wang
Wenhao Chen
Ning Zhang
Linfang Lu
Min Jiang
Zhigang Ni
Key Laboratory of Organosilicon Chemistry and Material Technology of Ministry of Education, Zhejiang Key Laboratory of Organosilicon Material Technology, College of Material, Chemistry and Chemical Engineering
Gengwen Tan
Key Laboratory of Bioinorganic and Synthetic Chemistry of Ministry of Education, Guangdong Basic Research Center of Excellence for Functional Molecular Engineering, School of Chemistry, IGCME
Di Wu