A graph-based statistical model for carbon nanostructures

C Chang-Chun He (School of Physics and Optoelectronics, South China University of Technology , Guangzhou 510640,) S Shao-Gang Xu (Department of Physics, Southern University of Science and Technology 2 , Shenzhen 518055,) J Jiarui Zeng (School of Physics and Optoelectronic Engineering, Hainan University 2 , Haikou 570228,) W Weijie HUANG Y Yao Yao Y Yu-Jun Zhao (School of Physics and Optoelectronics, South China University of Technology , Guangzhou 510640,) H Hu Xu X Xiao-Bao Yang (School of Physics and Optoelectronics, South China University of Technology , Guangzhou 510640,)

Abstract

Energy degeneracy in physical systems may be induced by symmetries of the Hamiltonian, and the resonance of degeneracy states in carbon nanostructures can effectively enhance the stability of the system. Combining the octet rule, we introduce a statistical model to determine the physical properties by lifting the energy degeneracy in carbon nanostructures. This model offers a direct path to accurately ascertain electron density distributions in quantum systems, akin to how charge density is used in density functional theory to deduce system properties. Our methodology diverges from traditional quantum mechanics, focusing instead on this unique statistical model by maximizing bonding entropy to determine the fundamental properties of materials. Applied to carbon nanoclusters and graphynes, our model not only precisely predicts bonding energies and electron density without relying on external parameters but also enhances the prediction of electronic structures through bond occupancy numbers, which act as effective hopping integrals. This innovation offers insights into the structural properties and quantum behavior of electrons across various dimensions.

Article Details

Volume / Issue Vol. 162, Issue 15
Published April 21, 2025
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (8)

C

Chang-Chun He

School of Physics and Optoelectronics, South China University of Technology , Guangzhou 510640,

S

Shao-Gang Xu

Department of Physics, Southern University of Science and Technology 2 , Shenzhen 518055,

J

Jiarui Zeng

School of Physics and Optoelectronic Engineering, Hainan University 2 , Haikou 570228,

W

Weijie HUANG

Y

Yao Yao

Y

Yu-Jun Zhao

School of Physics and Optoelectronics, South China University of Technology , Guangzhou 510640,

H

Hu Xu

X

Xiao-Bao Yang

School of Physics and Optoelectronics, South China University of Technology , Guangzhou 510640,