A five-terminal ITO transistor enabling memory, artificial synaptic behaviors, and logic operations

J Ji Xu M Mingming Lv (Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 2 , Ningbo 315201,) B Bing Xue S Sunan Tian (IMDEA Materials Institute 4 , C/Eric Kandel, 2, 28906 Getafe, Madrid,)

Abstract

The increasing complexity of fabrication and high transistor density is slowing down progress in integrated circuits. Simplified designs are now critical to boost circuit performance while reducing manufacturing challenges. Meanwhile, ITO (Indium Tin Oxide)-based devices have recently gained attention due to their good mobility and large-scale availability. However, multifunctional ITO-based transistors combining memory, logic gates, and artificial synaptic behaviors are rarely reported. Here, we propose a multifunctional five-terminal ITO-based transistor. By introducing a multi-electrode design, the device shows potential in addressing the limitations of traditional one-dimensional/two-dimensional control modes, effectively integrating logic operations and memory functions while simulating brain-like behaviors of artificial synaptic electronic devices. Experimental results demonstrate that multi-electrode cooperative regulation significantly enhances the programmability and dynamic flexibility of the device. A single transistor can perform the logic gate switching of traditional logic gate circuits (logic AND/OR gates), greatly simplifying the circuit structure. This work not only provides new insights into the efficient and low-power design of neuromorphic computing and artificial intelligence hardware but also offers innovative references for the application of multi-dimensional regulation devices in complex brain-like function simulations.

Article Details

Volume / Issue Vol. 162, Issue 22
Published June 14, 2025
ISSN 0021-9606
Publisher American Institute of Physics

Journal Info

The Journal of Chemical Physics

American Institute of Physics

ISSN: 0021-9606 Physical Sciences

Authors (4)

J

Ji Xu

M

Mingming Lv

Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences 2 , Ningbo 315201,

B

Bing Xue

S

Sunan Tian

IMDEA Materials Institute 4 , C/Eric Kandel, 2, 28906 Getafe, Madrid,