A broadband high-frequency magnetoelectric antenna based on dual-resonance energy-trapping mode

J Jun Liu T Tianhao Han (School of Electrical Engineering, Southwest Jiaotong University 1 , Chengdu 610031,) J Jiawei Chen (State Key Laboratory of Advanced Materials for Intelligent Sensing and Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Institute of Molecular Plus, Department of Chemistry) H Huakang Zhou (School of Electrical Engineering, Southwest Jiaotong University , Chengdu 610031,) Z Zhongming Yan (School of Electrical Engineering, Southwest Jiaotong University 1 , Chengdu 610031,) H Hongcheng Zhou (School of Electrical Engineering, Southwest Jiaotong University 1 , Chengdu 610031,) Y Yu Wang

Abstract

High-frequency magnetoelectric (ME) antennas provide a compact form factor and low power consumption for miniaturized wireless systems. However, the development of high-frequency ME antennas is constrained by narrow bandwidths and complex fabrication requirements. In this paper, a dual-resonance energy-trapping-mode ME antenna design is presented. Thickness-shear energy-trapping vibration can be excited when magnetostrictive layers partially cover X-cut LiNbO3, which allows the ME antenna to operate in the high-frequency range. The stacked magnetostrictive layers induce two adjacent resonances that broaden the bandwidth, and further improvement is achieved by optimizing the areas of both the magnetostrictive layers and the electrode. The measurement results show that the ME antenna achieves wideband operation in the range of 8.86–10.88 MHz, corresponding to a relative bandwidth of 20.47%. Additionally, the design circumvents the fabrication complexity associated with high-frequency ME antennas.

Article Details

Volume / Issue Vol. 138, Issue 13
Published October 07, 2025
ISSN 0021-8979
Publisher American Institute of Physics

Journal Info

Journal of Applied Physics

American Institute of Physics

ISSN: 0021-8979 Physical Sciences

Authors (7)

J

Jun Liu

T

Tianhao Han

School of Electrical Engineering, Southwest Jiaotong University 1 , Chengdu 610031,

J

Jiawei Chen

State Key Laboratory of Advanced Materials for Intelligent Sensing and Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Institute of Molecular Plus, Department of Chemistry

H

Huakang Zhou

School of Electrical Engineering, Southwest Jiaotong University , Chengdu 610031,

Z

Zhongming Yan

School of Electrical Engineering, Southwest Jiaotong University 1 , Chengdu 610031,

H

Hongcheng Zhou

School of Electrical Engineering, Southwest Jiaotong University 1 , Chengdu 610031,

Y

Yu Wang