2D Indium Oxide at the Epitaxial Graphene/SIC Interface: Synthesis, Structure, Properties, and Devices
Abstract
Abstract Scaled and high‐quality insulators are crucial for fabricating 2D/3D hybrid vertical electronic devices such as metal‐oxide‐semiconductor (MOS) based Schottky diodes and hot electron transistors, the production of which is constrained by the scarcity of bulk layered wide bandgap semiconductors. In this research, the synthesis of a new 2D insulator, monolayer InO 2 , which differs in stoichiometry from its bulk form is presented, over a large area (>300 µm 2 ) by intercalating at the epitaxial graphene (EG)/SiC interface. By adjusting the lateral size of graphene through optical lithography prior to the intercalation, the thickness of InO 2 is tuned such that it is 85% monolayer. The preference for monolayer formation of InO 2 is explained using molecular dynamics and density functional theory (DFT) calculations. Additionally, the bandgap of InO 2 is calculated to be 4.1 eV, differing from its bulk form (2.7 eV). Furthermore, MOS‐based Schottky diode measurements on InO 2 intercalated EG/n‐SiC demonstrate that the EG/n‐SiC junction transforms from ohmic to a Schottky junction upon intercalation, with a barrier height of 0.87 eV and a rectification ratio of ≈10 5 . These findings introduce a new addition to the 2D insulator family, demonstrating the utility of monolayer InO 2 as a barrier in vertical electronic devices.
Article Details
Authors (19)
Furkan Turker
Department of Materials Science and Engineering The Pennsylvania State University University Park Pennsylvania USA
Bohan Xu
Department of Pathology, Nanfang Hospital, Southern Medical University
Chengye Dong
Michael Labella
Materials Research Institute The Pennsylvania State University University Park PA 16802 USA
Nadire Nayir
Paul‐Drude‐Institute for Solid State Electronics Leibniz Institute within Forschungsverbund Berlin eV. Hausvogteiplatz 5–7 10117 Berlin Germany
Natalya Sheremetyeva
Department of Engineering Science and Mechanics The Pennsylvania State University University Park PA 16802 USA
Zachary J. Trdinich
Duanchen Zhang
Department of Materials Science and Engineering The Pennsylvania State University University Park PA 16802 USA
Gokay Adabasi
Bita Pourbahari
Canadian Centre for Electron Microscopy and Department of Materials Science and Engineering, McMaster University
Li‐Syuan Lu
Department of Materials Science and Engineering The Pennsylvania State University University Park Pennsylvania USA
Wesley E. Auker
Materials Research Institute The Pennsylvania State University University Park PA 16802 USA
Ke Wang
Tianjin Medical University Cancer Institute and Hospital Tianjin China
Mehmet Baykara
Department of Mechanical Engineering University of California Merced Merced CA 95343 USA
Vincent Meunier
Department of Engineering Science and Mechanics Pennsylvania State University Pennsylvania USA
Nabil Bassim
Canadian Centre for Electron Microscopy and Department of Materials Science and Engineering, McMaster University
Adri C. T. van Duin
Department of Materials Science and Engineering, The Pennsylvania State University 1 , University Park, Pennsylvania 16802,
Vincent H. Crespi
Department of Physics The Pennsylvania State University University Park Pennsylvania USA
Joshua A. Robinson