2D edge-seeded heteroepitaxy of ultrathin high-κ dielectric CaNb2O6 for 2D field-effect transistors

X Xiulian Fan J Jiali Yi B Bin Deng C Cong Zhou (The Institute for Advanced Studies) Z Zejuan Zhang J Jia Yu W Weihan Li C Cheng Li G Guangcheng Wu X Xilong Zhou T Tulai Sun Y Yihan Zhu J Jian Zhou J Juan Xia Z Zenghui Wang K Keji Lai (Department of Physics) Z Zheng Peng (School of Physical Science and Technology; Center for Transformative Science) D Dong Li A Anlian Pan (School of physics and electronics) Y Yu Zhou

Article Details

Volume / Issue Vol. 16, Issue 1
Published March 16, 2025
ISSN 2041-1723
Publisher Nature Portfolio

Journal Info

Nature Communications

Nature Portfolio

ISSN: 2041-1723 Open Access Life Sciences

Authors (20)

X

Xiulian Fan

J

Jiali Yi

B

Bin Deng

C

Cong Zhou

The Institute for Advanced Studies

Z

Zejuan Zhang

J

Jia Yu

W

Weihan Li

C

Cheng Li

G

Guangcheng Wu

X

Xilong Zhou

T

Tulai Sun

Y

Yihan Zhu

J

Jian Zhou

J

Juan Xia

Z

Zenghui Wang

K

Keji Lai

Department of Physics

Z

Zheng Peng

School of Physical Science and Technology; Center for Transformative Science

D

Dong Li

A

Anlian Pan

School of physics and electronics

Y

Yu Zhou