2D Cuprous Halide Scintillator with Dual Excitation‐Dependent and Thermochromic Luminescence toward Multifunctional Optoelectronic Applications

N Na Lin L Li Xiao (College of Chemistry and Molecular Sciences, Hubei Key Lab of Electrochemical Power Sources) Y Yishi Wu (Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing China) Y Yi‐Fan Wu (Research institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P. R. China) Z Zi‐Xian Li (Research institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P. R. China) T Tian‐Yu Yan (Research institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P. R. China) Z Zhi‐Wei Chen (Research institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P. R. China) C Cheng‐Yang Yue (Research Institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P.R. China) D Dongpeng Yan X Xiao‐Wu Lei (Research Institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P.R. China)

Abstract

Abstract Excitation‐ and temperature‐dependent multicolor luminescent materials are valuable in advanced optoelectronic devices while they haven't been realized in 2D metal halides owing to the restrictions of Kasha's rule. Herein, we reported a novel 2D lead‐free halide of (AMP) 2 Cu 2 Br 4 (AMP = N‐aminomorpholine) through structural engineering, in which the [Cu 2 Br 4 ] 2− layer is composed of corner‐ and edge‐shared [CuBr 4 ] tetrahedron. The non‐centrosymmetric structure enables (AMP) 2 Cu 2 Br 4 to exhibit an impressive second‐harmonic generation signal of ≈0.8 times that of KH 2 PO 4 (KDP). Remarkably, (AMP) 2 Cu 2 Br 4 possesses two independent self‐trapped exciton‐emitting states under different excitation energies, which display multicolor luminescence outputs from blue, white, to orange with near‐unity photoluminescence quantum yields (PLQYs). Additionally, the luminescence can be regulated in a wide temperature range of 300–400 K due to reversible energy transfer between two emitting bands, acting as a luminescence ratio thermometer with a ultrahigh relative thermal sensitivity of 56.755% K −1 . High PLQY and large Stokes shift further endow (AMP) 2 Cu 2 Br 4 strong radioluminescence with an ultrahigh light yield of 92,400 photons·MeV −1 , low detection limit of 121 n Gy air ·s −1 and a short afterglow of 0.41  m s. The abundant photophysical properties highlight the multiple optoelectronic applications of 2D cuprous halide in white light‐emitting, laser technology, flexible temperature sensors, and X‐ray imaging.

Article Details

Volume / Issue Vol. 37, Issue 43
Published October 01, 2025
ISSN 0935-9648
Publisher Unknown Publisher

Journal Info

Advanced Materials

Unknown Publisher

ISSN: 0935-9648 Physical Sciences

Authors (10)

N

Na Lin

L

Li Xiao

College of Chemistry and Molecular Sciences, Hubei Key Lab of Electrochemical Power Sources

Y

Yishi Wu

Beijing Key Laboratory for Optical Materials and Photonic Devices Department of Chemistry Capital Normal University Beijing China

Y

Yi‐Fan Wu

Research institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P. R. China

Z

Zi‐Xian Li

Research institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P. R. China

T

Tian‐Yu Yan

Research institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P. R. China

Z

Zhi‐Wei Chen

Research institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P. R. China

C

Cheng‐Yang Yue

Research Institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P.R. China

D

Dongpeng Yan

X

Xiao‐Wu Lei

Research Institute of Optoelectronic Functional Materials School of Chemistry Chemical Engineering and Materials Jining University Qufu Shandong 273155 P.R. China